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BLW50F晶体管资料
BLW50F别名：BLW50F三极管、BLW50F晶体管、BLW50F晶体三极管
BLW50F生产厂家：
BLW50F制作材料：Si-NPN
BLW50F性质：调幅 （AM）_SSB_功率放大 （L）
BLW50F封装形式：贴片封装
BLW50F极限工作电压：110V
BLW50F最大电流允许值：2.5A
BLW50F最大工作频率：28MHZ
BLW50F引脚数：4
BLW50F最大耗散功率：17W
BLW50F放大倍数：
BLW50F图片代号：G-266
BLW50Fvtest：110
BLW50Fhtest：28000000000
- BLW50Fatest：2.5
BLW50Fwtest：17
BLW50F代换 BLW50F用什么型号代替：
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLW50F | HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE grou | Philips 飞利浦 |   | |
BLW50F | NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW50F is Designed for use in transmitters in the HF and VHF band applications up tp 30 MHz. FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W(PEP) • Omnigold™ Metalization System | ASI | | |
BLW50F | NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW50F is Designed for use in transmitters in the HF and VHP band applications up tp 30MHz. FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W(PEP> • Omnigold™ Metalization System | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BLW50F | HF/VHF power transistor Description: N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the HF and VHF band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups a | ELEFLOW | | |
BLW50F | HF/VHF power transistor | ETC 知名厂家 | ETC | |
BLW50F | NPN SILICON RF POWER TRANSISTOR | ETC 知名厂家 | ETC | |
BLW50F | Trans GP BJT NPN 55V 2.5A 4-Pin SOT-123A | ETC 知名厂家 | ETC | |
BLW50F产品属性
- 类型
描述
- 型号
BLW50F
- 功能描述
射频双极电源晶体管 RF Transistor
- RoHS
否
- 制造商
M/A-COM Technology Solutions
- 配置
Single 直流集电极/Base Gain hfe
- Min
40
- 最大工作频率
30 MHz 集电极—发射极最大电压
- VCEO
25 V 发射极 - 基极电压
- VEBO
4 V
- 集电极连续电流
20 A
- 功率耗散
250 W
- 封装/箱体
Case 211-11
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PHI |
24+ |
TO-59 |
9630 |
我们只做原装正品现货!量大价优! |
|||
恩XP |
24+ |
NA/ |
3256 |
原装现货,当天可交货,原型号开票 |
|||
恩XP |
25+ |
996880 |
只做原装,欢迎来电资询 |
||||
恩XP |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
PHILTPS |
23+ |
高频管 |
450 |
专营高频管模块,全新原装! |
|||
PHI |
22+ |
高频管 |
350 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
恩XP |
23+ |
98900 |
原厂原装正品现货!! |
||||
MOTOROLA/摩托罗拉 |
25+ |
TO-59 |
1200 |
全新原装现货,价格优势 |
|||
PH |
24+ |
580 |
|||||
恩XP |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
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BLW50F规格书下载地址
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BLW50F数据表相关新闻
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2020-9-30
DdatasheetPDF页码索引
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