HF/VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE grou

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLW50F is Designed for use in transmitters in the HF and VHF band applications up tp 30 MHz. FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W(PEP) • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: BLW50F is Designed for use in transmitters in the HF and VHP band applications up tp 30MHz. FEATURES: • PG = 14 dB min. at 75 W/30 MHz • IMD3 = 50 dBc max. at 75 W(PEP> • Omnigold™ Metalization System

HF/VHF power transistor

Description: N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the HF and VHF band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups a

HF/VHF power transistor

NPN SILICON RF POWER TRANSISTOR

Trans GP BJT NPN 55V 2.5A 4-Pin SOT-123A