Description:

N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the HF and VHF band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched hFE groups are available on request.

Features:

It has a 3/8 flange envelope with a ceramic cap. All leads are isolated from the flange.