位置：首页 > IC中文资料第10571页 > BLV6N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BLV6N60 | N-channel Enhancement Mode Power MOSFET 文件：408.44 Kbytes Page：6 Pages | ESTEK 伊泰克电子 |   | |
BLV6N60 | N-channel Enhancement Mode Power MOSFET | Belling 上海贝岭 | | |
Avalanche Energy Specified DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements | ISC 无锡固电 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：460.3 Kbytes Page：6 Pages | ZSELEC 淄博圣诺 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel 600V (D-S) Power MOSFET 文件：1.0803 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
BLV6N60产品属性
- 类型
描述
- 型号
BLV6N60
- 制造商
ESTEK
- 制造商全称
ESTEK
- 功能描述
N-channel Enhancement Mode Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STEK |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
BL |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
BL |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
PH |
23+ |
高频管 |
220 |
专营高频管模块,全新原装! |
|||
BL |
23+ |
TO-220 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
上海贝岭 |
TO-220 |
7956 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
PHI |
24+ |
TO-57 |
9630 |
我们只做原装正品现货!量大价优! |
|||
PH |
24+ |
580 |
|||||
恩XP |
24+ |
SMD |
6618 |
公司现货库存,支持实单 |
|||
PHI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
BLV6N60规格书下载地址
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瀚佳科技（深圳）有限公司 专业进口电子元器件代理商
2020-1-14
DdatasheetPDF页码索引
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