BLV108

description: N-channel enhanced VDMOS, high speed switch, no secondary breakdown

MOSFET

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200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages