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BLV10晶体管资料

  • BLV10别名:BLV10三极管、BLV10晶体管、BLV10晶体三极管

  • BLV10生产厂家

  • BLV10制作材料:Si-NPN

  • BLV10性质:甚高频 (VHF)_功率放大 (L)

  • BLV10封装形式:贴片封装

  • BLV10极限工作电压:36V

  • BLV10最大电流允许值:1.5A

  • BLV10最大工作频率:175MHZ

  • BLV10引脚数:4

  • BLV10最大耗散功率:8W

  • BLV10放大倍数

  • BLV10图片代号:G-266

  • BLV10vtest:36

  • BLV10htest:175000000

  • BLV10atest:1.5

  • BLV10wtest:8

  • BLV10代换 BLV10用什么型号代替:MRF221,

BLV10价格

参考价格:¥204.2050

型号:BLV10 品牌:Advanced Semiconductor, 备注:这里有BLV10多少钱,2026年最近7天走势,今日出价,今日竞价,BLV10批发/采购报价,BLV10行情走势销售排行榜,BLV10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BLV10

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

PHILIPS

飞利浦

BLV10

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f.and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ove

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV10

射频(RF)双极晶体管 RF Transistor

ASI Semiconductor

BLV10

VHF power transistor

ETC

知名厂家

BLV10

VHF power transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES •

PHILIPS

飞利浦

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • H

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • H

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. FEATURES •

PHILIPS

飞利浦

BLV108

description: N-channel enhanced VDMOS, high speed switch, no secondary breakdown

BELLING

上海贝岭

BLV10产品属性

  • 类型

    描述

  • VDS(Max.):

    200V

  • ID(Max.):

    0.3A

  • RDS(on)(Max.):

  • Package:

    TO92

  • Reference:

    BS108

更新时间:2026-5-14 22:30:00
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