BLV10晶体管资料

  • BLV10别名:BLV10三极管、BLV10晶体管、BLV10晶体三极管

  • BLV10生产厂家

  • BLV10制作材料:Si-NPN

  • BLV10性质:甚高频 (VHF)_功率放大 (L)

  • BLV10封装形式:贴片封装

  • BLV10极限工作电压:36V

  • BLV10最大电流允许值:1.5A

  • BLV10最大工作频率:175MHZ

  • BLV10引脚数:4

  • BLV10最大耗散功率:8W

  • BLV10放大倍数

  • BLV10图片代号:G-266

  • BLV10vtest:36

  • BLV10htest:175000000

  • BLV10atest:1.5

  • BLV10wtest:8

  • BLV10代换 BLV10用什么型号代替:MRF221,

BLV10价格

参考价格:¥204.2050

型号:BLV10 品牌:Advanced Semiconductor, 备注:这里有BLV10多少钱,2025年最近7天走势,今日出价,今日竞价,BLV10批发/采购报价,BLV10行情走势销售排行榜,BLV10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BLV10

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

Philips

飞利浦

BLV10

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f.and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ove

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

BLV10

射频(RF)双极晶体管 RF Transistor

ETC

知名厂家

BLV10

VHF power transistor

ETC

知名厂家

BLV10

VHF power transistor

NJS

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES •

Philips

飞利浦

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • H

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • H

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for common emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. FEATURES •

Philips

飞利浦

BLV108

description: N-channel enhanced VDMOS, high speed switch, no secondary breakdown

Belling

上海贝岭

BLV10产品属性

  • 类型

    描述

  • 型号

    BLV10

  • 功能描述

    射频双极电源晶体管 RF Transistor

  • RoHS

  • 制造商

    M/A-COM Technology Solutions

  • 配置

    Single 直流集电极/Base Gain hfe

  • Min

    40

  • 最大工作频率

    30 MHz 集电极—发射极最大电压

  • VCEO

    25 V 发射极 - 基极电压

  • VEBO

    4 V

  • 集电极连续电流

    20 A

  • 功率耗散

    250 W

  • 封装/箱体

    Case 211-11

  • 封装

    Tray

更新时间:2025-10-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
24+
NA/
3456
原装现货,当天可交货,原型号开票
PHI
24+
高频管
6000
全新原装正品现货 假一赔佰
恩XP
24+
SMD
6618
公司现货库存,支持实单
KODENSHI
25+
SMD-6
64581
百分百原装现货 实单必成 欢迎询价
KODENSHI
24+
SMD-6
880000
明嘉莱只做原装正品现货
PHI
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
PHI
23+
NA
8021
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
PHI
2025+
高频管
675
全新原厂原装产品、公司现货销售
PHI
24+
135
现货供应
PHI
24+
SMD-6
6000
只做原装正品现货 欢迎来电查询15919825718

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