Description:

The NTE578 is a general purpose rectifier employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.

Features:

Low Reverse Current

Low Stored Charge, Majority Carrier Conduction

Low Power Loss/High Efficiency

Highly Stable Oxide Passivated Junction

Guard–Ring for Stress Protection

Low Forward Voltage

150°C Operating Junction Temperature

High Surge Capacity