VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability.

RF Manual 16th edition

封装/外壳：SOT-279A 包装：托盘 描述：RF FET 2 NC 65V 18DB SOT279A 分立半导体产品 晶体管 - FET，MOSFET - 射频

VHF push-pull power MOS transistor

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VHF push-pull power MOS transistor

文件：103.5 Kbytes Page：16 Pages

VHF power MOS transistor

文件：91.6 Kbytes Page：12 Pages

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages

N-channel silicon field-effect transistors

文件：97.4 Kbytes Page：11 Pages