HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES •

RF Manual 16th edition

HF/VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. FEATURES •

HF-VHF power MOS transistor

Trans RF MOSFET N-CH 65V 1A 4-Pin SOT-123A

RF Manual 16th edition

RF Manual 16th edition

RF Manual 16th edition

RF Manual 16th edition

Power LDMOS transistor

Power LDMOS transistor

General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, availa

Power LDMOS transistor

Power LDMOS transistor

General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, availa

Power LDMOS transistor

250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.\n\nThe BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earles High efficiency\nEasy power control\nExcellent ruggedness\nExcellent thermal stability\nIntegrated ESD protection\nDesigned for broadband operation (2400 MHz to 2500 MHz)\nInternally matched\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Power LDMOS transistor

General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, availabl

Power LDMOS transistor

General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, availabl

Power LDMOS transistor

General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. F

Power LDMOS transistor

General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9LS140 is designed for high power CW applications and is assembled in a high performance ceramic package. Features and benefits  H

Power LDMOS transistor

General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. F

HF/VHF power MOS transistor

文件：72.46 Kbytes Page：11 Pages

HF/VHF power MOS transistor

文件：72.46 Kbytes Page：11 Pages

封装/外壳：SOT-539A 包装：托盘 描述：RF FET LDMOS 65V 13.3DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-539A 包装：托盘 描述：RF FET LDMOS 65V 13.3DB SOT539A 分立半导体产品 晶体管 - FET，MOSFET - 射频

Power LDMOS transistor

文件：337.44 Kbytes Page：12 Pages

Power LDMOS transistor

文件：189.58 Kbytes Page：13 Pages

Power LDMOS transistor

文件：299.14 Kbytes Page：11 Pages

Power LDMOS transistor

文件：306.69 Kbytes Page：11 Pages

Power LDMOS transistor

文件：167.65 Kbytes Page：12 Pages

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)