Power LDMOS transistor

General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. F

Power LDMOS transistor

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications atfrequencies from 2400 MHz to 2500 MHz.\n\nThe BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applicationsand are assembled in a high performance ceramic package. High efficiency\nHigh power gain\nExcellent ruggedness\nExcellent thermal stability\nIntegrated ESD protection\nDesigned for broadband operation (2400 MHz to 2500 MHz)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS);

Power LDMOS transistor

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封装/外壳：SOT-1135A 包装：托盘 描述：RF FET LDMOS 65V 18.5DB SOT1135A 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-1135A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF FET LDMOS 65V 18.5DB SOT1135A 分立半导体产品 晶体管 - FET，MOSFET - 射频