15 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

HYPER FAST CENTERTAP RECTIFIER

FEATURES: ● Hyper Fast Recovery: 35 ns Maximum ● High Surge Rating ● Low Reverse Leakage Current ● Low Junction Capacitance ● Hermetically Sealed Package, isolated (TO-254, Z) or hot case (SMD1) ● Gold Eutectic Die Attach Available ● Ultrasonic Aluminum Wire Bonds ● TX, TXV, or Space Level

Isolation voltage 3750Vrms 1ch Gate Driver Providing Galvanic Isolation

文件：1.15806 Mbytes Page：29 Pages

15 W, 6.0 GHz, GaN HEMT Die

文件：544.37 Kbytes Page：8 Pages

CERAMIC DIELECTRIC TRIMMER CAPACITORS

文件：550.03 Kbytes Page：12 Pages