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BGSA144ML10

Features  Low RON resistance of 1.74 Ω at each RF port in ON state  Ultra low COFF capacitance of 89 fF in OFF state  Individually controlled reflective open or short to ground OFF ports to eliminate uwanted antenna resonances  High RF operating voltage handling 80 V in OFF state  MIPI

Infineon

英飞凌

Ultra high RF voltage antenna tuning SP4T

Features  Low RON resistance of 1.74 Ω at each RF port in ON state  Ultra low COFF capacitance of 89 fF in OFF state  Individually controlled reflective open or short to ground OFF ports to eliminate uwanted antenna resonances  High RF operating voltage handling 80 V in OFF state  MIPI

Infineon

英飞凌

BGSA144ML10

Features  Low RON resistance of 1.74 Ω at each RF port in ON state  Ultra low COFF capacitance of 89 fF in OFF state  Individually controlled reflective open or short to ground OFF ports to eliminate uwanted antenna resonances  High RF operating voltage handling 80 V in OFF state  MIPI

Infineon

英飞凌

Ultra high RF voltage antenna tuning SP4T

Features  Low RON resistance of 1.74 Ω at each RF port in ON state  Ultra low COFF capacitance of 89 fF in OFF state  Individually controlled reflective open or short to ground OFF ports to eliminate uwanted antenna resonances  High RF operating voltage handling 80 V in OFF state  MIPI

Infineon

英飞凌

Ultra high RF voltage antenna tuning SP4T

Features  Low RON resistance of 1.74 Ω at each RF port in ON state  Ultra low COFF capacitance of 89 fF in OFF state  Individually controlled reflective open or short to ground OFF ports to eliminate uwanted antenna resonances  High RF operating voltage handling 80 V in OFF state  MIPI

Infineon

英飞凌

Ultra small antenna tuning SP4T with resonance stoppers

Features  Ultra low RON resistance of 0.8 Ω in ON state  Low COFF capacitance of 155 fF in OFF state  RF operating voltage handling 45 V in OFF state  MIPI RFFE 2.1 control interface  Support both 1.8V and 1.2V VIO operation  External USID_SEL pin enabling 4 default USID addresses  S

Infineon

英飞凌

Ultra small antenna tuning SP4T with resonance stoppers

Features  Ultra low RON resistance of 0.8 Ω in ON state  Low COFF capacitance of 155 fF in OFF state  RF operating voltage handling 45 V in OFF state  MIPI RFFE 2.1 control interface  Support both 1.8V and 1.2V VIO operation  External USID_SEL pin enabling 4 default USID addresses  S

Infineon

英飞凌

Ultra small antenna tuning SP4T with resonance stoppers

Features  Low RON resistance of 1.5 Ω in ON state  Low COFF capacitance of 80 fF in OFF state  RF operating voltage handling 50 V in OFF state  MIPI RFFE 2.1 control interface  Support both 1.8V and 1.2V VIO operation  External USID_SEL pin enabling 4 default USID addresses  Small fo

Infineon

英飞凌

Ultra small antenna tuning SP4T with resonance stoppers

Features  Low RON resistance of 1.5 Ω in ON state  Low COFF capacitance of 80 fF in OFF state  RF operating voltage handling 50 V in OFF state  MIPI RFFE 2.1 control interface  Support both 1.8V and 1.2V VIO operation  External USID_SEL pin enabling 4 default USID addresses  Small fo

Infineon

英飞凌

Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

Infineon

英飞凌

Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

Infineon

英飞凌

Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

Infineon

英飞凌

Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

Infineon

英飞凌

Ultra small antenna tuning SP4T

Features  Ultra low RON resistance of 0.85 Ω in ON state  Low COFF capacitance of 160 fF in OFF state  High RF operating peak voltage handling of 45 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 default USID addresses via external USID_S

Infineon

英飞凌

Two throws low resistance antenna tuning switch

Features • Low RON resistance of 1.4 Ω at each port in ON state • Low COFF capacitance of 157 fF at each port in OFF state • High RF operating peak voltage handling of 50 V in OFF state • Low harmonic generation • MIPI RFFE 2.1 control interface • Support of MIPI and GPIO control modes • 1.

Infineon

英飞凌

Ultra high RF voltage antenna tuning switch

Features  Low RON resistance of 2.0 Ω at each port in ON state  Low COFF capacitance of 165 fF at each port in OFF state  High RF operating peak voltage handling of typical 90 V in OFF state  Low harmonic generation  MIPI RFFE 2.1 control interface  Extremely low current consumption of

Infineon

英飞凌

Ultra high RF voltage antenna tuning switch

Description The BGSA400ML10 is a versatile shunt to ground 4 x single-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low COFF as well as low RON enabling applications up to 7.125GHz. The BGSA400ML10 is ideal for antenna tuning application. This chip integrates on-chip

Infineon

英飞凌

Ultra high RF voltage antenna tuning switch

Features  Low RON resistance of 2.0 Ω at each port in ON state  Low COFF capacitance of 165 fF at each port in OFF state  High RF operating peak voltage handling of typical 90 V in OFF state  Low harmonic generation  MIPI RFFE 2.1 control interface  Extremely low current consumption of

Infineon

英飞凌

Ultra high RF voltage antenna tuning switch

Description The BGSA400ML10 is a versatile shunt to ground 4 x single-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low COFF as well as low RON enabling applications up to 7.125GHz. The BGSA400ML10 is ideal for antenna tuning application. This chip integrates on-chip

Infineon

英飞凌

Ultra high RF voltage antenna tuning switch

Description The BGSA400ML10 is a versatile shunt to ground 4 x single-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low COFF as well as low RON enabling applications up to 7.125GHz. The BGSA400ML10 is ideal for antenna tuning application. This chip integrates on-chip

Infineon

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

Infineon

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

Infineon

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

Infineon

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

Infineon

英飞凌

Four throws low resistance antenna tuning switch

Features  Low RON resistance of 0.98 Ω at each port in ON state  Low COFF capacitance of 205 fF at each port in OFF state  High RF operating peak voltage handling of typical 50 V in OFF state  MIPI RFFE 2.1 control interface  Extremely low current consumption of 22 μA  4 USID addresses

Infineon

英飞凌

射频开关

Infineon

英飞凌

射频开关

Infineon

英飞凌

RF其它IC和模块

Infineon

英飞凌

Dual Single Pole Single Throw Antenna Tuning Switch

文件:917.94 Kbytes Page:18 Pages

Infineon

英飞凌

Maximizing battery life and data rate for 3G/4G mobile devices

文件:145.04 Kbytes Page:2 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.05 Kbytes Page:1 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.05 Kbytes Page:1 Pages

Infineon

英飞凌

Maximizing battery life and data rate for 3G/4G mobile devices

文件:145.04 Kbytes Page:2 Pages

Infineon

英飞凌

封装/外壳:10-XFQFN 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF SWITCH SPDT TSNP10-1 RF/IF,射频/中频和 RFID 射频开关

Infineon

英飞凌

Low Resistance SPDT Antenna Aperture Switch

文件:307.12 Kbytes Page:2 Pages

Infineon

英飞凌

封装/外壳:8-XFLGA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC RF SWITCH SPDT TSLP8-1 RF/IF,射频/中频和 RFID 射频开关

Infineon

英飞凌

Maximizing battery life and data rate for 3G/4G mobile devices

文件:145.04 Kbytes Page:2 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.04 Kbytes Page:1 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.04 Kbytes Page:1 Pages

Infineon

英飞凌

Low Resistance Antenna Aperture Switch

文件:629.97 Kbytes Page:23 Pages

Infineon

英飞凌

High RF Voltage SP4T Switch

文件:394.63 Kbytes Page:2 Pages

Infineon

英飞凌

High RF Voltage SP4T Switch

文件:381.65 Kbytes Page:2 Pages

Infineon

英飞凌

High RF Voltage SP4T Switch

文件:417.04 Kbytes Page:2 Pages

Infineon

英飞凌

Low Resistance Antenna Tuning Switch

文件:296.76 Kbytes Page:2 Pages

Infineon

英飞凌

Low Resistance Antenna Tuning Switch

文件:562.54 Kbytes Page:2 Pages

Infineon

英飞凌

Maximizing battery life and data rate for 3G/4G mobile devices

文件:145.04 Kbytes Page:2 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.03 Kbytes Page:1 Pages

Infineon

英飞凌

Material Content Data Sheet

文件:33.03 Kbytes Page:1 Pages

Infineon

英飞凌

High RF Voltage Dual SPST Antenna Switch

文件:131.56 Kbytes Page:2 Pages

Infineon

英飞凌

High RF Voltage Dual SPST Antenna Switch

文件:131.53 Kbytes Page:2 Pages

Infineon

英飞凌

Low Resistance Antenna Tuning Shunt Switch

文件:387.33 Kbytes Page:2 Pages

Infineon

英飞凌

更新时间:2025-12-26 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon(英飞凌)
24+
ATSLP10
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
Infineon(英飞凌)
24+
ATSLP10
4648
原装现货,免费供样,技术支持,原厂对接
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
Infineon(英飞凌)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Infineon(英飞凌)
23+
标准封装
7000
公司只做原装,可来电咨询
Infineon(英飞凌)
2447
PG-ATSLP-10
115000
4500个/圆盘一级代理专营品牌!原装正品,优势现货,
INFINEON
23+
-
8000
专注配单,只做原装进口现货
INFINEON
100

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