位置：首页 > IC中文资料 > BGN30T65SD
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BGN30T65SD | IGBT单管 | BYD 比亚迪半导体 |   | |
IGBT for Automotive Applications 650 V, 30 A Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17 | ONSEMI 安森美半导体 | | ||
IGBT for Automotive Application 650 V, 30 A Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17 | ONSEMI 安森美半导体 | | ||
IGBT for Automotive Applications 文件：235.33 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Control Integrated POwer System 文件：1.23983 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
Schottky Barrier Diode 文件：1.12003 Mbytes Page：5 Pages | ROHM 罗姆 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BYD/比亚迪 |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
BYD |
22+ |
TO247 |
5000 |
原装正品假一罚十,代理渠道价格优 |
|||
飞利蒲 |
24+ |
2 |
|||||
BYD |
22+ |
TO247 |
6500 |
BYD全系列在售 |
|||
PHI |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
BYD |
25+ |
IGBT |
2000 |
原厂原装,价格优势 |
|||
BYD/比亚迪 |
2450+ |
TO3P |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
PHI |
24+ |
106 |
现货供应 |
||||
恩XP |
22+ |
SOT115U |
9000 |
原厂渠道,现货配单 |
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BGN30T65SD规格书下载地址
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DdatasheetPDF页码索引
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