Si-MMIC-Amplifier in SIEGET 25-Technologie

Si-MMIC-Amplifier in SIEGET® 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz (VD = 3 V, ID = typ. 6.7 mA) • Noise figure NF = 2.2 dB at 1.8 GHz • Reverse isolation > 28 dB and return loss IN / OUT > 12 dB at 1.8

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS