RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Produc

Small Signal NPN Transistors / Dual Transistors

Small Signal NPN Transistors, Dual Transistors

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Produc

NPN SILICON RF TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a hermetically sealed package designed for VHF/UHF amplifier, oscillator, and converter applications. MARKING CODE: FULL PART NUMBER

WIDE BAND VHF/UHF AMPLIFIER

WIDE BAND VHF/UHF AMPLIFIER The BFX89 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fT, low reverse capacitance, ex

NPN - RF Transistor Chip

Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bondin

WIDE BAND VHF/UHF AMPLIFIER

DESCRIPTION The BFXS9 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fr, low reverse capacitance, excellent cross mo

WIDE BAND VHF/UHF AMPLIFIER

DESCRIPTION The BFXS9 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fr, low reverse capacitance, excellent cross mo

WIDE BAND VHF/UHF AMPLIFIER

WIDE BAND VHF/UHF AMPLIFIER

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件：17.77 Kbytes Page：2 Pages

RF/Microwave Si BJT Power Devices & Pallets

WIDE BAND VHF/UHF AMPLIFIER

文件：79.86 Kbytes Page：4 Pages

封装/外壳：TO-206AF，TO-72-4 金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 15V 1.4GHZ TO72 分立半导体产品 晶体管 - 双极（BJT）- 射频

Bipolar NPN Device in a Hermetically sealed LCC1

文件：15.69 Kbytes Page：1 Pages

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.05 Kbytes Page：1 Pages