HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz • SIEGET 25-Line In

HiRel 硅双极晶体管技术

HiRel微波晶体管 • HiRel 分立和微波半导体\n• 用于中等功率放大器\n• 压缩点 P-1dB =19dBm 1.8 GHz\n• 最大。可用增益 Gma = 16dB，频率为 1.8 GHz\n• 密封微波封装\n• 转换频率 fT = 20 GHz\n• SIEGET ® 25 线英飞凌科技接地发射极晶体管 - 25 GHz fT 线\n• 类型变体编号 03\nESA 空间合格 ESA/SCC 详细规格。编号：5611/008/01 B;

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz • SIEGET 25-Line In

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz • SIEGET 25-Line In

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz • SIEGET 25-Line In

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz • SIEGET 25-Line In

HiRel NPN Silicon RF Transistor

文件：146.07 Kbytes Page：4 Pages

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor

文件：146.07 Kbytes Page：4 Pages