HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz •

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor

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HiRel 硅双极晶体管技术

HiRel微波晶体管 • HiRel 分立和微波半导体\n• 适用于高达 12 GHz 的振荡器\n• 出色的 Gms = 23dB (1.8 GHz)\n• 跃迁频率 fT = 20 GHz\n• 类型变体编号 01\nESA 航天合格 ESA/SCC 详细规格。编号：5611/008/01 B;

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz •

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz •

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz •

HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Low Current Applications • For Oscillators up to 12 GHz • Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz • Hermetically sealed microwave package • Transition Frequency fT = 20 GHz •

HiRel NPN Silicon RF Transistor

文件：145.85 Kbytes Page：4 Pages

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz;

20W TO 140W STEP-DOWN SWITCHING REGULATOR FAMILY

DESCRIPTION The GS-R400/2 series is a family of small sized high current, high voltage step-down switching regulators. The integral heatsink allows a large power handling capability and it provides also an effective shielding to minimize EMI. FEATURES MTBF in excess of 500,000 hours

Low-Cost, Low-Power, 110MHz Op Amp with Disable

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