NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

NPN Silicon RF Transistor • For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA • fT = 8 GHz F = 1.2 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package

NPN Silicon RF Transistor for low noi...

Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

HALL.EFFECT PICKUP IGNITION CONTROLLER

DESCRIPTION The L482 is an integrated circuit designed for use with an NPN darlington in breakerless ignition systems with hall-effect pickup sensors and high energy ignition coils. It controls the energy stored in the ignition coil and the desaturation time of the external darlington to lim

100mW STEREO HEADPHONE AMPLIFIER

Description The TS482 is a dual audio power amplifier able to drive a 16 or 32Ω stereo headset down to low voltages. ■ Operating from Vcc=2V to 5.5V ■ 100mW into 16Ω at 5V ■ 38mW into 16Ω at 3.3V ■ 11.5mW into 16Ωat 2V ■ Switch ON/OFF click reduction circuitry ■ High power supply rejec

100mW STEREO HEADPHONE AMPLIFIER

Description The TS482 is a dual audio power amplifier able to drive a 16 or 32Ω stereo headset down to low voltages. ■ Operating from Vcc=2V to 5.5V ■ 100mW into 16Ω at 5V ■ 38mW into 16Ω at 3.3V ■ 11.5mW into 16Ωat 2V ■ Switch ON/OFF click reduction circuitry ■ High power supply rejec

Round.Top View Type

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