低噪声RF 管基

• Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA\n • High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V\n • Ease of use due to the gain-bandwidth capabilities\n • High sensitivity low noise laser receiver matrix\n • High RF Transistor Hfe controllability\n • Very thin ;

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

NPN Silicon Germanium RF Transistor

Product Brief The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of approximately 40 GHz and is suited for low

丝印代码：R2；C NPN RF bipolar transistor

文件：553.86 Kbytes Page：22 Pages

丝印代码：R2；C NPN RF bipolar transistor

文件：553.86 Kbytes Page：22 Pages

包装：散装 描述：RF BIP TRANSISTORS

包装：散装 描述：RF BIP TRANSISTORS

NPN Silicon Germanium RF Transistor

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.16359 Mbytes Page：29 Pages

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.16359 Mbytes Page：29 Pages