NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Low Noise Figure

DESCRIPTION • Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz • High Gain |S21e|2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz APPLICATIONS • Designed for low distortion broadband amplifiers and oscillators.

Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, lc = 2 mA, f = 900MHz • High Gain |S21e|²= 12.5 dB TYP. @VCE= 8 V,lc = 15 mA,f = 900 MHz APPLICATIONS • Designed for low distortion broadband amplifiers and oscillators.

NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)

NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

低噪声RF 管基

NPN 硅射频晶体管，用于集电极电流为 0.5mA 至 20 mA 时高达 2GHz 的低失真宽带放大器和振荡器 • 适用于集电极电流为 0.5mA 至 20 mA 时频率高达 2GHz 的低失真宽带放大器和振荡器\n• 无铅（符合 RoHS 标准）封装;

Low Noise Silicon Bipolar RF Transistor

文件：602 Kbytes Page：6 Pages

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

Low Noise Silicon Bipolar RF Transistor

文件：602 Kbytes Page：6 Pages