NPN 6 GHz wideband transistor

DESCRIPTION Silicon NPN transistor mounted in a 4-lead dual-emitter SOT172A1. envelope with a ceramic cap. All leads are isolated from the mounting base. It is primarily intended for use in MATV and CATV amplifiers. FEATURES • High power gain • Emitter-ballasting resistors for good thermal st

NPN 6 GHz wideband transistor

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

Silicon Complementary Transistors Darlington Power Amp, Switch

Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec

Silicon planar type

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Silicon planar type

文件：41.87 Kbytes Page：2 Pages

Silicon planar type

文件：41.87 Kbytes Page：2 Pages