丝印代码：ATs；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin = 0.9 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

低噪声硅晶体管，频率高达5 GHz

NPN Silicon RF Transistor for highest gain low noise amplifier at 1.8 GHz ·Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB\n ·Gold metallization for high reliability\n ·SIEGET® 45 - Line\n ·Pb-free (RoHS compliant) package\n ·Qualification report according to AEC-Q101 available;

丝印代码：ATs；NPN Silicon RF Transistor

文件：548.51 Kbytes Page：10 Pages

丝印代码：ATs；Low Noise Silicon Bipolar RF Transistor

文件：578.51 Kbytes Page：10 Pages

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with vi

NPN Silicon RF Transistor

NPN Silicon RF Transistor •For highest gain low noise amplifier at 1.8 GHz •Outstanding Gms= 20 dB Noise Figure F= 0.9 dB •Gold metallization for high reliability •SIEGET 45 - Line

NPN Silicon RF Transistor

NPN Silicon RF Transistor•For highest gain low noise amplifier at 1.8 GHz\n•Outstanding Gms= 20 dB\n  Noise Figure F= 0.9 dB\n•Gold metallization for high reliability\n•SIEGET  45 - Line

低噪声RF 管基

用于 ESD 保护高增益低噪声放大器的 NPN 硅射频晶体管 • 出色的 ESD 性能（典型值 1000 V (HBM)）出色的 Gms = 20 dB 噪声系数 F = 0.9 dB\n• 无铅（符合 ROHS 标准）封装;

NPN Silicon RF Transisto

NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Gms= 20 dB Noise Figure F= 0.9 dB • SIEGET ® 45 - Line • Pb-free (ROHS compliant) package1) • Qualified according AEC Q101 * Short term desc

NPN Silicon RF Transistor

文件：548.51 Kbytes Page：10 Pages

Low Noise Silicon Bipolar RF Transistor

文件：578.51 Kbytes Page：10 Pages

Low Noise Silicon Bipolar RF Transistor

文件：628.47 Kbytes Page：9 Pages

NPN Silicon RF Transistor

文件：602.67 Kbytes Page：10 Pages

NPN Silicon RF Transistor

文件：602.67 Kbytes Page：10 Pages

Low Noise Silicon Bipolar RF Transistor

文件：628.47 Kbytes Page：9 Pages

封装/外壳：SC-82A，SOT-343 包装：卷带（TR） 描述：RF TRANS NPN 5V 30GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 5V 30GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN Silicon RF Transistor

文件：504.48 Kbytes Page：6 Pages

Low Noise Silicon Bipolar RF Transistor

文件：538.44 Kbytes Page：6 Pages

NPN Silicon RF Transistor

文件：504.48 Kbytes Page：6 Pages

Low Noise Silicon Bipolar RF Transistor

文件：538.44 Kbytes Page：6 Pages

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca