Low Noise Silicon Bipolar RF Transistor

• For ESD protected high gain low noise amplifier

• High ESD robustness

typical value 1000 V (HBM)

• Outstanding Gms = 21.5 dB @ 1.8 GHz

Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz

• Pb-free (RoHS compliant) and halogen-free package

with visible leads

• Qualification report according to AEC-Q101 available