NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequ

TRANZYSTORY NPN

[UNITRA CEMI] TRANZYSTORY NPN

NPN Silicon RF Transistor

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Low Noise Silicon Bipolar RF Transistor

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低噪声RF 管基

NPN Silicon RF Transistor

Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz.

NPN Silicon RF Transistor

文件：110.63 Kbytes Page：10 Pages

Low Noise Silicon Bipolar RF Transistor

文件：576.27 Kbytes Page：9 Pages

低噪声RF 管基

NPN Silicon RF Transistor

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Low Noise Silicon Bipolar RF Transistor

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NPN Silicon RF Transistor

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Low Noise Silicon Bipolar RF Transistor

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封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 3.5V 45GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 3.5V 45GHZ SOT343-4 分立半导体产品 晶体管 - 双极（BJT）- 射频

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Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

횠6.1mm mounting Robust stainless steel housing

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MINIATURE FUSEHOLDERS

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Sandblast Stencil

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