Product description

The BFP520F is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz. It remains cost competitive without compromising on ease of use.

Feature list

• Minimum noise figure NFmin = 0.95 dB at 1.8 GHz, 2 V, 2 mA

• High gain Gms = 22.5 dB at 1.8 GHz, 2 V, 20 mA

• OIP3 = 23.5 dBm at 1.8 GHz, 2 V, 20 mA

Potential applications

• Radio-frequency oscillators such as local oscillator in LNB

• Broadband low noise amplifiers (LNAs) for CATV, DVB-T, DAB/DMB and FM/AM radio

• LNAs for wireless communications such as cordless phones