NPN Silicon RF Transistor

Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz.

低噪声RF 管基

NPN硅射频晶体管 • 适用于 1.8 GHz 和 2 mA / 2 V 时的最高增益低噪声放大器，出色的 Gms = 23 dB 噪声系数 F = 0.95 dB\n• 过渡频率 fT = 45 GHz\n• SIEGET ® 45 - Line\n• 无铅（符合 RoHS 标准）封装;

Low Noise Silicon Bipolar RF Transistor

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NPN Silicon RF Transistor

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NPN Silicon RF Transistor

文件：69.16 Kbytes Page：6 Pages

Low Noise Silicon Bipolar RF Transistor

文件：537.41 Kbytes Page：6 Pages

封装/外壳：4-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 3.5V 45GHZ 4TSFP 分立半导体产品 晶体管 - 双极（BJT）- 射频

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca

Amplifier with Voltage Controlled Gain, AGCAmp

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Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages

Amplifier with Voltage Controlled Gain, AGCAmp

文件：609.73 Kbytes Page：8 Pages