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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BFG10 | NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC |   |
BFG10 | RF Manual 16th edition | ETC 知名厂家 | ETC | |
BFG10 | NPN 2 GHz RF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co | Philips 飞利浦 | | |
BFG10 | NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | |
NPN 2 GHz RF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co | Philips 飞利浦 | | ||
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 2 GHz RF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co | Philips 飞利浦 | | ||
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common | Philips 飞利浦 | | ||
UHF power transistor | ETC 知名厂家 | ETC | | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common | Philips 飞利浦 | | ||
UHF power transistor | ETC 知名厂家 | ETC | | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common | Philips 飞利浦 | | ||
UHF power transistor | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | | |
封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 8V 1.9GHZ SOT143B 分立半导体产品 晶体管 - 双极（BJT）- 射频 | ETC 知名厂家 | ETC | | |
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-343 反向插针 包装：卷带（TR） 描述：RF TRANS NPN 10V 1.9GHZ 4SO 分立半导体产品 晶体管 - 双极（BJT）- 射频 | ETC 知名厂家 | ETC | | |
UHF power transistor 文件：54.3 Kbytes Page：9 Pages | JMNIC 锦美电子 | | ||
UHF power transistor 文件：54.3 Kbytes Page：9 Pages | JMNIC 锦美电子 | | ||
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | | |
NPN 2 GHz RF power transistor 文件：65.2 Kbytes Page：10 Pages | JMNIC 锦美电子 | | ||
NPN 2 GHz RF power transistor 文件：65.2 Kbytes Page：10 Pages | JMNIC 锦美电子 | | ||
NPN 2 GHz RF power transistor | ETC 知名厂家 | ETC | |
BFG10产品属性
- 类型
描述
- 型号
BFG10
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
NPN 2 GHz RF power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
|||
NEXPERIA/安世 |
25+ |
N/A |
860000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
23+ |
SOT-143 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
25+ |
SOT343 |
20300 |
NXP/恩智浦原装特价BFG10W/X即刻询购立享优惠#长期有货 |
|||
PHI |
04+ |
SOT-143 |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
17+ |
SOT143 |
9888 |
全新原装现货 |
|||
PHI |
21+ |
SOT-143 |
12000 |
原装现货假一赔十 |
|||
PHI |
2450+ |
SOT143-4 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
NEXPERIA |
23+ |
SOT-23 |
63000 |
原装正品现货 |
|||
SOT-143 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
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BFG10规格书下载地址
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2019-11-30
DdatasheetPDF页码索引
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