丝印代码：-MS；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

丝印代码：-MS；NPN 2 GHz RF power transistor

丝印代码：-MS；RF Manual 16th edition

NPN 2 GHz RF功率晶体管

丝印代码：-MS；NPN 2 GHz RF power transistor

丝印代码：-MT；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

丝印代码：tMT；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

丝印代码：-MT；NPN 2 GHz RF power transistor

丝印代码：tMT；RF Manual 16th edition

丝印代码：-MT；NPN 2 GHz RF power transistor

丝印代码：tMT；RF Manual 16th edition

丝印代码：-MT；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

丝印代码：tMT；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

UHF power transistor

NPN宽频带晶体管

UHF power transistor

丝印代码：T5；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

丝印代码：T5；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

UHF power transistor

RF Manual 16th edition

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

RF Manual 16th edition

丝印代码：tMT；NPN 2 GHz RF power transistor

封装/外壳：TO-253-4，TO-253AA 包装：托盘 描述：RF TRANS NPN 8V 1.9GHZ SOT143B 分立半导体产品 晶体管 - 双极（BJT）- 射频

丝印代码：tMT；NPN 2 GHz RF power transistor

UHF power transistor

封装/外壳：SOT-343 反向插针 包装：卷带（TR） 描述：RF TRANS NPN 10V 1.9GHZ 4SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

UHF power transistor

文件：54.3 Kbytes Page：9 Pages

UHF power transistor

文件：54.3 Kbytes Page：9 Pages

NPN 2 GHz RF power transistor

NPN 2 GHz RF power transistor

文件：65.2 Kbytes Page：10 Pages

NPN 2 GHz RF power transistor

文件：65.2 Kbytes Page：10 Pages

NPN 2 GHz RF power transistor