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FDH999

High Speed Switching Diodes

High Speed Switching Diodes

FAIRCHILD

仙童半导体

FDH999

Diode Switching 35V 0.2A 2-Pin DO-35 Bulk

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)

Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications

SIEMENS

西门子

Integrated Circuit Adjustable Precision Shunt Regulator

Description: The NTE999 is a three–terminal adjustable shunt regulator with guaranteed thermal stability over a temperature range of –0° to +70°C. The output voltage may be set to any value between Vref (approximately 2.5V) and 36V with two external resistors. This device has a typical dynamic ou

NTE

Integrared Circuit Programmable Precision Reference

Description: The NTE999M integrated circuit is a three–terminal programmable shunt regulator. This monolithic IC voltage reference operates as a low temperature coefficient zener which is programmable from Vref to 36 volts with two external resistors. This device exhibits a wide operating current

NTE

Integrared Circuit Programmable Precision Reference

Description: The NTE999SM integrated circuit is a three–terminal programmable shunt regulator. This monolithic IC voltage reference operates as a low temperature coefficient zener which is programmable from Vref to 36 volts with two external resistors. This device exhibits a wide operating curren

NTE

FDH999产品属性

  • 类型

    描述

  • Peak Reverse Repetitive Voltage:

    35V

  • Peak Reverse Recovery Time:

    5ns

  • Peak Reverse Current:

    1uA

  • Peak Non-Repetitive Surge Current:

    4A

  • Peak Forward Voltage:

    1@0.01AV

  • Operating Junction Temperature:

    175°C

  • Minimum Operating Temperature:

    -65°C

  • Maximum Power Dissipation:

    500mW

  • Maximum Operating Temperature:

    175°C

  • Maximum Continuous Forward Current:

    0.2A

  • Configuration:

    Single

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    2020-4-23