NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BF821; BF823. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

SILICON EPITAXIAL TRANSISTORS

SILICON EPITAXIAL TRANSISTORS N–P–N transistors SOT-23 Formed SMD Package

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation – 1.5 W • Plastic case SOT-223 • Weight approx. – 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN high-voltage transistors

NPN General Purpose Amplifier

FEATURES ● Low current(max.50mA). ● High voltage(max.300V). APPLICATIONS ● Telephony and professional communication equipment.

丝印代码：1V；Small Signal Transistors (NPN)

FEATURES ◆ NPN Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. ◆ As complementary types, the PNP transistors BF821 and BF823 are recommended.

TRANSISTOR (NPN)

FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low current (max.50 mA) ● High voltage (max.300V) ● Telephony and professional communication equipment.

NPN High-Voltage Transistors

Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).

丝印代码：1V；SOT-23 Plastic-Encapsulate Transistors

FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment.

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low current, high voltage. Applications Telephony and professional communication equipment

丝印代码：1V；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) 3. Applications • Telephony and professional communication equipment

SILICON EPITAXIAL TRANSISTORS

SILICON EPITAXIAL TRANSISTORS N–P–N transistors SOT-23 Formed SMD Package

300V,0.05A,General Purpose NPN Bipolar Transistor

小信号晶体管

晶体管

SOT-23 - Power Transistor and Darlingtons

文件：27.5 Kbytes Page：2 Pages

丝印代码：1V；NPN high voltage transistor

1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF821-Q 2. Features and benefits • Low current (max. 50 mA) • High voltage (max. 300 V) • Qualified according to AEC-Q101 and recommended for use in automotive

丝印代码：1V*；NPN high-voltage transistor

NPN High-Voltage Transistor

Features ● Low current (max. 50 mA) ● High voltage (max. 300 V).

丝印代码：1V*；NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment.

丝印代码：1V；NPN high-voltage transistor

FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS •Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.05A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN high-voltage transistors

文件：105.78 Kbytes Page：6 Pages

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 300V 0.05A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN high-voltage transistor

文件：114.04 Kbytes Page：6 Pages

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

8/16-bit Data Bus Flash Memory Card

DESCRIPTION The MF8XXX-GMCAVXX is a flash memory card which uses eight-megabit or sixteen megabit flash electrically erasable and programmable read only memory IC’s as common memory and a 64-kilobit electrically erasable and programmable read only memory as attribute memory. The MF8XXX-GNCAVXX i

JFET RF AMPLIFIER

JFET RF AMPLIFIER N-CHANNEL - DEPLETION

ULTRAFAST RECTIFIERS 8 AMPERES 200-400-600 VOLTS

. . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • Epoxy Meets U

ULTRAFAST RECTIFIER 8 AMPERES 200 VOLTS

SWITCHMODE Power Rectifier Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 ns Recovery Times • 150°C Operating Junction Temperature • Epoxy Meets UL94, VO @ 1/8″ • High Temperature