位置:首页 > IC中文资料 > BF512F

型号 功能描述 生产厂家 企业 LOGO 操作
BF512F

Blackfin Embedded Processor

GENERAL DESCRIPTION The ADSP-BF512/ADSP-BF512F, ADSP-BF514/ADSPBF514F, ADSP-BF516/ADSP-BF516F, ADSP-BF518/ADSPBF518F processors are members of the Blackfin® family of products, incorporating the Analog Devices/Intel Micro Signal Architecture (MSA). Blackfin processors combine a dual-MAC state-of-

AD

亚德诺

BF512F

Blackfin Embedded Processor

GENERAL DESCRIPTION The ADSP-BF512/ADSP-BF512F, ADSP-BF514/ADSPBF514F, ADSP-BF516/ADSP-BF516F, ADSP-BF518/ADSPBF518F processors are members of the Blackfin® family of products, incorporating the Analog Devices/Intel Micro Signal Architecture (MSA). Blackfin processors combine a dual-MAC state-of-

AD

亚德诺

BF512F

Blackfin Embedded Processor

AD

亚德诺

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These feat

PHILIPS

飞利浦

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators

IP Library: Ultra Low Noise, High PSRR, Low Power, 30mA Very Low Dropout Voltage Regulators ■ RF REGULATOR ■ VERY LOW DROPOUT VOLTAGE : 30mV ■ ULTRA LOW OUTPUT VOLTAGE NOISE ■ HIGH PSRR : 70dB ■ LOW STAND-BY CURRENT : 20µA ■ LOW QUIESCENT CURRENT : 150µA FULL LOAD ■ NO CURRENT IN POWER DOWN

STMICROELECTRONICS

意法半导体

Memory TAG IC 512 bit High Endurance EEPROM 13.56MHz, ISO 15693 Standard Compliant with E.A.S.

SUMMARY DESCRIPTION The LRI512 is a contactless memory, powered by an externally transmitted radio wave. It is fully compliant with the ISO15693 recommendation for radio-frequency power and signal interface. The LRI512 contains 512 bits of Electrically Erasable Programmable Memory (EEPROM

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

STMICROELECTRONICS

意法半导体

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

STMICROELECTRONICS

意法半导体

BF512F数据表相关新闻