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BF314晶体管资料

  • BF314别名:BF314三极管、BF314晶体管、BF314晶体三极管

  • BF314生产厂家:德国AEG公司_德国西门子AG公司

  • BF314制作材料:Si-NPN

  • BF314性质:调频 (FM)_甚高频 (VHF)_前置放大 (V)

  • BF314封装形式:直插封装

  • BF314极限工作电压

  • BF314最大电流允许值

  • BF314最大工作频率:450MHZ

  • BF314引脚数:3

  • BF314最大耗散功率

  • BF314放大倍数

  • BF314图片代号:A-23

  • BF314vtest:0

  • BF314htest:450000000

  • BF314atest:0

  • BF314wtest:0

  • BF314代换 BF314用什么型号代替:BF161,BF166,BF200,BF222,BF225,BF310,BF496,BF502,BF503,3DG112D,

型号 功能描述 生产厂家 企业 LOGO 操作
BF314

NPN HIGH FREQUENCY SILICON PLANAR EPITAXIAL TRANSISTOR

GENERAL DESCRIPTION The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.

MICRO-ELECTRONICS

BF314

NPN HIGH FREQUENCY SILICON PLANAR EPITAXIAL TRANSISTOR

GENERAL DESCRIPTION\nThe BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.

MICRO-ELECTRONICS

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

PHILIPS

飞利浦

丝印代码:H04;Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

ROHM

罗姆

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

ROHM

罗姆

丝印代码:H04;Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

ROHM

罗姆

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch

MOTOROLA

摩托罗拉

BF314产品属性

  • 类型

    描述

  • 型号

    BF314

  • 制造商

    MICRO-ELECTRONICS

  • 制造商全称

    Micro Electronics

  • 功能描述

    NPN HIGH FREQUENCY SILICON PLANAR EPITAXIAL TRANSISTOR

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