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BF291A晶体管资料

  • BF291A别名:BF291A三极管、BF291A晶体管、BF291A晶体三极管

  • BF291A生产厂家:RIZ

  • BF291A制作材料:Si-NPN

  • BF291A性质:视频输出 (Vid)

  • BF291A封装形式:直插封装

  • BF291A极限工作电压:160V

  • BF291A最大电流允许值:0.03A

  • BF291A最大工作频率:80MHZ

  • BF291A引脚数:3

  • BF291A最大耗散功率:0.8W

  • BF291A放大倍数

  • BF291A图片代号:C-78

  • BF291Avtest:160

  • BF291Ahtest:80000000

  • BF291Aatest:0.03

  • BF291Awtest:0.8

  • BF291A代换 BF291A用什么型号代替:BF257,BF258,BF259,BF657,BF658,BF659,2N5058,2N5059,

型号 功能描述 生产厂家 企业 LOGO 操作

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Low Noise Micropower Precision Voltage References

GENERAL DESCRIPTION The ADR290, ADR291 and ADR292 are low noise, micropower precision voltage references that use an XFET™ reference circuit. The new XFET architecture offers significant performance improvements over traditional bandgap and Zener-based references. Improvements include: one quarte

AD

亚德诺

Silicon Complementary Transistors Medium Power Amp, Switch

Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of high–fide

NTE

更新时间:2026-5-14 19:39:02
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8-TSSOP
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安罗世纪电子只做原装正品货

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