N-Channel RF Amplifiers

N-Channel RF Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

JFET - General Purpose

N–Channel Junction Field Effect Transistor designed for VHF and UHF applications. • Low Cost TO–92 Type Package • Forward Transfer Admittance, Yfs = 4.5 mmhos (Min) • Transfer Capacitance – Crss = 0.7 (Typ) • Power Gain at f = 800 MHz, Typ. = 11 dB

PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS

N-Channel JFETs

N-Channel RF Amplifiers

N-Channel RF Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50.

VHF/UHF Amplifier(N-Channel, Depletion)

JFET VHF/UHF AMPLIFIER N-CHANNEL - DEPLETION

JFET N-Channel 30V TO-92

N-Channel Junction Field Effect Tranistor designed for VHF and UHF applications • Low Cost TO-92 Type Package\n• Forward Transfer Admittance, Yfs = 4.5 mmhos (Min)\n• Transfer Capacitance - Crss = 0.7 pF (Typ)\n• Power Gain at f = 800 MHz, Typ = 11 dB;

VHF/UHF Amplifier(N-Channel, Depletion)

封装/外壳：TO-226-3，TO-92-3 长体 包装：带 描述：JFET N-CH 30V 7MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

JFET PRO ELECTRON SERIES

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封装/外壳：TO-226-3，TO-92-3 长体 包装：带 描述：JFET N-CH 30V 7MA TO92 分立半导体产品 晶体管 - FET，MOSFET - 射频

PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)