NPN RF Transistor

NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

NPN medium frequency transistor

DESCRIPTION NPN medium frequency transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 25 mA) • Low voltage (max. 25 V). APPLICATIONS • Output stage of a vision IF amplifier.

NPN SILICON PLANAR EPITAXIAL TRANSISTOR

RF Transistor

RF Transistor

RF Transistor NPN Silicon

NPN Silicon Transistor

Feature: • NPN Silicon Planar Epitaxial RF Transistor Description Transistor, NPN, TO-92

NPN medium frequency transistor

NPN SILICON PLANAR EPITAXIAL RF TRANSISTOR

PNP OUTPUT TRANSISTOR

文件：301.65 Kbytes Page：1 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 25V 1.1GHZ TO92-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN RF Transistor

TO-92 Plastic Package Transistors (NPN)

文件：226.57 Kbytes Page：2 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：RF TRANS NPN 25V 1.1GHZ TO92-3 分立半导体产品 晶体管 - 双极（BJT）- 射频

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series. FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V •

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. FEATURES • Small plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8µs • Continuous reverse voltage: max. 75 V • Repeti

Silicon epitaxial planar type

Silicon epitaxial planar type For high voltage switching circuit ■ Features • High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting

Silicon NPN Transistor Low Noise, High Gain Amplifier

Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

Precision Reference

文件：292.16 Kbytes Page：12 Pages