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BDW83晶体管资料
BDW83别名：BDW83三极管、BDW83晶体管、BDW83晶体三极管
BDW83生产厂家：美国得克萨斯仪表公司
BDW83制作材料：Si-N+Darl+Di
BDW83性质：低频或音频放大 （LF）_功率放大 （L）
BDW83封装形式：直插封装
BDW83极限工作电压：45V
BDW83最大电流允许值：15A
BDW83最大工作频率：>1MHZ
BDW83引脚数：3
BDW83最大耗散功率：150W
BDW83放大倍数：β>750
BDW83图片代号：B-62
BDW83vtest：45
BDW83htest：1000100
- BDW83atest：15
BDW83wtest：150
BDW83代换 BDW83用什么型号代替：BDV65,BDV67,FH9B,
BDW83价格
参考价格：￥12.3671
型号：BDW83C 品牌：ST 备注：这里有BDW83多少钱，2025年最近7天走势，今日出价，今日竞价，BDW83批发/采购报价，BDW83行情走势销售排行榜，BDW83报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BDW83 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC |   | |
BDW83 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | ISC 无锡固电 | | |
BDW83 | NPN SILICON DARLINGTONS POWER TRANSISTORS NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, B | COMSET | | |
BDW83 | Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -lc= 15A • High DC Current Gain-hFE= 750(Min)@ lc= 6A • Complement to Type BDW84/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
BDW83 | NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A | POINN Power Innovations Ltd | | |
BDW83 | NPN SILICON POWER DARLINGTONS 文件：120.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
BDW83 | Silicon NPN Power Transistors 文件：149.15 Kbytes Page：3 Pages | SAVANTIC | | |
BDW83 | NPN SILICON POWER DARLINGTONS 文件：282.24 Kbytes Page：5 Pages | Bourns 伯恩斯 | | |
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A | POINN Power Innovations Ltd | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | ISC 无锡固电 | | ||
NPN SILICON DARLINGTONS POWER TRANSISTORS NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, B | COMSET | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -lc= 15A • High DC Current Gain-hFE= 750(Min)@ lc= 6A • Complement to Type BDW84/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A | POINN Power Innovations Ltd | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | ISC 无锡固电 | | ||
NPN SILICON DARLINGTONS POWER TRANSISTORS NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, B | COMSET | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -lc= 15A • High DC Current Gain-hFE= 750(Min)@ lc= 6A • Complement to Type BDW84/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
NPN SILICON DARLINGTONS POWER TRANSISTORS NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, B | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
NPN power Darlington transistor Description The BDW83C is an epitaxial-base NPN power monolithic Darlington transistor mounted in TO-247 plastic package. It is intended for use in power linear and switching applications. Features ■ High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDW83C is a Silicon Epitaxial-Base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary type is BDW84C. ■ BDW83C IS A STMicroelectronics PREFERRED SALESTYPE ■ COM | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A | POINN Power Innovations Ltd | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -lc= 15A • High DC Current Gain-hFE= 750(Min)@ lc= 6A • Complement to Type BDW84/A/B/C APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
NPN power Darlington transistor Description The BDW83C is an epitaxial-base NPN power monolithic Darlington transistor mounted in TO-247 plastic package. It is intended for use in power linear and switching applications. Features ■ High current capability ■ Fast switching speed ■ High DC current gain Applications ■ Linear | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D ● 150 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 6 A | POINN Power Innovations Ltd | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type BDW84/84A/84B/84C/84D • DARLINGTON • High DC current gain APPLICATIONS • For use in power linear and switching applications. | ISC 无锡固电 | | ||
NPN SILICON DARLINGTONS POWER TRANSISTORS NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW84, BDW84A, BDW84B, BDW84C, B | COMSET | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • Collector Current -lc= 15A • High DC Current Gain-hFE= 750(Min)@ lc= 6A • Complement to Type BDW84D APPLICATIONS • Designed for general purpose amplifier and low speed switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors 文件：149.15 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER DARLINGTONS 文件：282.24 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
NPN SILICON POWER DARLINGTONS 文件：120.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：16.32 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
封装/外壳：TO-218-3 包装：卷带（TR） 描述：TRANS NPN DARL 60V 15A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 80V 15A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Central | | ||
NPN SILICON POWER DARLINGTONS 文件：120.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors 文件：149.15 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER DARLINGTONS 文件：282.24 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
Silicon NPN Power Transistors 文件：149.15 Kbytes Page：3 Pages | SAVANTIC | | ||
NPN SILICON POWER DARLINGTONS 文件：282.24 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：49.9 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.53 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
NPN SILICON POWER DARLINGTONS 文件：120.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：49.9 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | ||
NPN SILICON POWER DARLINGTONS 文件：120.59 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
Silicon NPN Power Transistors 文件：149.15 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO3 文件：15.53 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | ||
NPN SILICON POWER DARLINGTONS 文件：282.24 Kbytes Page：5 Pages | Bourns 伯恩斯 | | ||
NPN SILICON POWER DARLINGTONS 文件：282.24 Kbytes Page：5 Pages | Bourns 伯恩斯 | |
BDW83产品属性
- 类型
描述
- 型号
BDW83
- 功能描述
达林顿晶体管 150W 15A NPN
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
22257 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANJIT |
24+ |
SOT323 |
6000 |
公司现货库存,支持实单 |
|||
ST |
25+ |
TO3P |
180 |
原装正品,假一罚十! |
|||
BOURNS/伯恩斯 |
1113+ |
TO-247 |
4130 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO-218 |
45000 |
ST/意法全新现货BDW83C即刻询购立享优惠#长期有排单订 |
|||
ST |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
PWI |
23+ |
NA |
30487 |
专做原装正品,假一罚百! |
|||
BOURNSINC |
23+ |
SOT-93 |
81000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
西门子 |
23+ |
TO-3P |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
POWER |
23+ |
TO247 |
9526 |
BDW83芯片相关品牌
BDW83规格书下载地址
BDW83参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDX10
- BDW94CF
- BDW94C
- BDW94B
- BDW94A
- BDW94
- BDW93CFP
- BDW93CFI
- BDW93CF
- BDW93C
- BDW93B
- BDW93A
- BDW93
- BDW92
- BDW91
- BDW84D
- BDW84C
- BDW84B
- BDW84A
- BDW84
- BDW83D
- BDW83C
- BDW83B
- BDW83A
- BDW74D
- BDW74C
- BDW74B
- BDW74A
- BDW74
- BDW73D
- BDW73C
- BDW73B
- BDW73A
- BDW73
- BDW64D
- BDW64C
- BDW64B
- BDW64A
- BDW64
- BDW63D
- BDW63C
- BDW63B
- BDW63A
- BDW63
BDW83数据表相关新闻
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BD9328EFJ：降压型开关稳压器 ●简介 BD9328EFJ是一个同步降压开关稳压器，集成了2低电阻N沟道MOSFET。 较宽广的输入电压范围内达到2A的连续输出电流。 电流模式能提供快速瞬态响应和容易的相位补偿。 ●特点 1）宽输入范围4.2V〜18.0V 2）2A输出电流 3）高侧/低侧FET导通电阻;0.15/0.13Ω电源开关 4）低ESR输出陶瓷电容器 5）低待机电流在关断模式 6）380 kHz的固定经营频
2012-11-10
DdatasheetPDF页码索引
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