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BDT8晶体管资料

BDT81别名：BDT81三极管、BDT81晶体管、BDT81晶体三极管
BDT81生产厂家：荷兰飞利浦公司
BDT81制作材料：Si-NPN
BDT81性质：FN_开关管（S）_功率放大（L）
BDT81封装形式：直插封装
BDT81极限工作电压：60V
BDT81最大电流允许值：15A
BDT81最大工作频率：<1MHZ或未知
BDT81引脚数：3
BDT81最大耗散功率：125W
BDT81放大倍数：
BDT81图片代号：B-45
BDT81vtest：60
BDT81htest：999900
BDT81atest：15
BDT81wtest：125

BDT81代换 BDT81用什么型号代替：

型号	功能描述	生产厂家企业	LOGO
BDT81	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT82	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT82	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou	ISC 无锡固电	ISC
BDT82	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ Ic=-5A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio outp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT82.	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT82F	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	ISC 无锡固电	ISC
BDT82F	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT83	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT84	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou	ISC 无锡固电	ISC
BDT84	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT84	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ Ic=-5A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio outp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT84F	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	ISC 无锡固电	ISC
BDT84F	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT85	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT86	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ Ic=-5A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio outp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT86	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT86	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou	ISC 无锡固电	ISC
BDT86F	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	ISC 无锡固电	ISC
BDT86F	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT87	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT88	SILICON POWER TRANSISTOR SILICON POWER TRANSISTOR The BDT82 – BDT84 – BDT86 – BDT88 are PNP epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81 – BDT83 – BDT85 – BDT87.	COMSET	COMSET
BDT88	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou	ISC 无锡固电	ISC
BDT88	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio ou	ISC 无锡固电	ISC
BDT88	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ Ic=-5A • Collector-Emitter Sustaining Voltage- : VCEO(sus) = -60V(Min)- BDT82; -80V(Min)- BDT84; -100V(Min)- BDT86; -120V(Min)- BDT88 • Complement to Type BDT81/83/85/87 APPLICATIONS • Designed for use in audio outp	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT88F	isc Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	ISC 无锡固电	ISC
BDT88F	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain -hFE = 40(Min)@ IC= -5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F • Complement to Type BDT81F/83F/85F/87F APPLICATIONS • Designed for use in	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT81	isc Silicon NPN Power Transistors 文件：116.4 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT81	SILICON POWER TRANSISTORS 文件：151.55 Kbytes Page：4 Pages	COMSET	COMSET
BDT81	Silicon NPN Power Transistors 文件：129.039 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT81_12	SILICON POWER TRANSISTORS 文件：151.55 Kbytes Page：4 Pages	COMSET	COMSET
BDT81F	isc Silicon NPN Power Transistors 文件：111.44 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT81F	Silicon NPN Power Transistors 文件：127.11 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT82	SILICON POWER TRANSISTORS 文件：151.45 Kbytes Page：4 Pages	COMSET	COMSET
BDT82	GP BJT	ETC 知名厂家	ETC
BDT82	Transistor	COMSET	COMSET
BDT82_12	SILICON POWER TRANSISTORS 文件：151.45 Kbytes Page：4 Pages	COMSET	COMSET
BDT83	isc Silicon NPN Power Transistors 文件：116.4 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT83	SILICON POWER TRANSISTORS 文件：151.55 Kbytes Page：4 Pages	COMSET	COMSET
BDT83	Silicon NPN Power Transistors 文件：129.039 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT83	Transistor	COMSET	COMSET
BDT83F	isc Silicon NPN Power Transistors 文件：111.44 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT83F	Silicon NPN Power Transistors 文件：127.11 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT84	SILICON POWER TRANSISTORS 文件：151.45 Kbytes Page：4 Pages	COMSET	COMSET
BDT85	SILICON POWER TRANSISTORS 文件：151.55 Kbytes Page：4 Pages	COMSET	COMSET
BDT85	Silicon NPN Power Transistors 文件：129.039 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT85	isc Silicon NPN Power Transistors 文件：116.4 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT85F	isc Silicon NPN Power Transistors 文件：111.44 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT85F	Silicon NPN Power Transistors 文件：127.11 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT86	SILICON POWER TRANSISTORS 文件：151.45 Kbytes Page：4 Pages	COMSET	COMSET
BDT87	SILICON POWER TRANSISTORS 文件：151.55 Kbytes Page：4 Pages	COMSET	COMSET
BDT87	Silicon NPN Power Transistors 文件：129.039 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT87	isc Silicon NPN Power Transistors 文件：116.4 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT87F	isc Silicon NPN Power Transistors 文件：111.44 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BDT87F	Silicon NPN Power Transistors 文件：127.11 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BDT88	Silicon PNP Power Transistors 文件：97.83 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BDT88	SILICON POWER TRANSISTORS 文件：151.45 Kbytes Page：4 Pages	COMSET	COMSET
BDT88	Silicon PNP Power Transistors 文件：99.43 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

BDT8产品属性

类型
描述
型号
BDT8
制造商
TT Electronics/ Semelab
功能描述
TRANSISTOR NPN TO-220

BDT8供应商更多...

更新时间：2025-12-25 17:07:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市中飞凌科技有限公司	BDT83F	ST	26+	TO-220F	60000	只有原装可配单	询价
深圳市振宏微科技有限公司	BDT92	PHI	23+	NA	2186	专做原装正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	BDT82F	恩XP	23+	TO-220	90000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市星佑电子有限公司	BDT82	PHI	05+	原厂原装	81	只做全新原装真实现货供应	询价
深圳市一线半导体有限公司	BDT81F		24+	TO-220FA	10000	全新	询价
深圳市华来深电子有限公司	BDT91	恩XP	23+	TO-220	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市联世界科技有限公司	BDT91	PHI	24+/25+		25	原装正品现货库存价优	询价
深圳市威尔健半导体有限公司	BDT91	JD/晶导	23+	SOD-323	69820	终端可以免费供样,支持BOM配单!	询价
深圳市河锋鑫科技有限公司	BDT87	恩XP	TO-220	22+	6000	十年配单,只做原装	询价
深圳市盈慧通电子有限公司	BDT83F	ST	2511	TO-220F	16900	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价

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BDT8晶体管资料

BDT8产品属性

BDT8供应商更多...

BDT8芯片相关品牌

BDT8规格书下载地址

BDT8参数引脚图相关

BDT8数据表相关新闻

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BE-A301

BF7612CM28，40k现货，批次21+

BF7612CM28，BYD，40K，21+

BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2

BD9328EFJ-降压型开关稳压器

DdatasheetPDF页码索引