BDT65晶体管资料

  • BDT65别名:BDT65三极管、BDT65晶体管、BDT65晶体三极管

  • BDT65生产厂家:英国Mullard有限公司

  • BDT65制作材料:Si-N+Darl+Di

  • BDT65性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • BDT65封装形式:直插封装

  • BDT65极限工作电压:60V

  • BDT65最大电流允许值:12A

  • BDT65最大工作频率:>10MHZ

  • BDT65引脚数:3

  • BDT65最大耗散功率:125W

  • BDT65放大倍数:β>1000

  • BDT65图片代号:B-89

  • BDT65vtest:60

  • BDT65htest:10000100

  • BDT65atest:12

  • BDT65wtest:125

  • BDT65代换 BDT65用什么型号代替:BDV65,BDW40,BDW93A,BDX87A,2N6057,

型号 功能描述 生产厂家&企业 LOGO 操作
BDT65

SILICON DARLINGTON POWER TRANSISTORS

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

BDT65

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

BDT65

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

COMSET

BDT65

Silicon NPN Darlington Power Transistor

文件:137.96 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SILICON DARLINGTON POWER TRANSISTORS

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·High DC Current Gain ·DARLINGTON ·Complement to type BDT64C APPLICATIONS ·For audio output stages and general purpose amplifier and switching applications

SAVANTIC

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

ISC

无锡固电

Silicon NPN Darlington Power Transistor

文件:137.96 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Darlington Power Transistor

文件:135.8 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Darlington Power Transistor

文件:137.96 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Darlington Power Transistor

文件:135.8 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Silicon NPN Darlington Power Transistor

文件:137.96 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Power Transistors

文件:93.45 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Darlington Power Transistor

文件:135.8 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Silicon NPN Darlington Power Transistor

文件:135.8 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BDT65产品属性

  • 类型

    描述

  • 型号

    BDT65

  • 功能描述

    SILICON DARLINGTON POWER TRANSISTORS

更新时间:2025-8-14 23:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INF
24+
SOT143
21000
公司现货库存,支持实单
ST/意法
24+
NA/
3330
原装现货,当天可交货,原型号开票
PHIL
23+
NA
20000
全新原装假一赔十
DSI
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
11+
TO-220
1480
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
25+
TO-220
20
原装正品,假一罚十!
ST/意法
25+
TO220
20300
ST/意法原装特价BDT65C即刻询购立享优惠#长期有货
PHI
24+/25+
100
原装正品现货库存价优
FSC
1950+
TO220
9852
只做原装正品现货!或订货假一赔十!
ST
25+
TO-220
16900
原装,请咨询

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