SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BDT64-A-B-C Compliance to RoHS.

SILICON DARLINGTON POWER TRANSISTORS

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64/A/B/C APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications

BDT65A - 单晶体管 双极, 达林顿, NPN, 80 V, 125 W, 12 A, 1500 hFE

The BDT65A is a NPN silicon epitaxial Power Transistor in monolithic Darlington circuit for audio output stages, general purpose amplifier and switching applications. ·PNP complement BDT64A;

Trans Darlington NPN 80V 12A 3-Pin(3+Tab) TO-220AB

BJT 双极性三极管

Silicon NPN Darlington Power Transistor

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector Current -IC= 12A • High DC Current Gain-hFE= 1000(Min)@ IC= 5A • Complement to Type BDT64F/AF/BF/CF APPLICATIONS • Designed for audio output stages and general purpose amplifier applications

Silicon NPN Darlington Power Transistor

文件：135.8 Kbytes Page：2 Pages