1 to 4-Cell Li-Ion Battery Manager For Application Processors

General Description BD99954 is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and available in a 40pin 0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small 41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP package which is designed to meet high degree demands for space-c

1 to 4-Cell Li-Ion Battery Manager For Application Processors

BD99954GW is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and available in a 40pin 0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small 41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP package which is designed to meet high degree demands for space-constraint equipment such a

1 to 4-Cell Li-Ion Battery Manager For Application Processors

BD99954MWV is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and available in a 40pin 0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small 41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP package which is designed to meet high degree demands for space-constraint equipment such

1 to 4-Cell Li-Ion Battery Manager For Application Processors

General Description BD99954 is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and available in a 40pin 0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small 41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP package which is designed to meet high degree demands for space-c

1 to 4-Cell Li-Ion Battery Manager For Application Processors

General Description BD99954 is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and available in a 40pin 0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small 41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP package which is designed to meet high degree demands for space-c

1 to 4-Cell Li-Ion Battery Manager For Application Processors

BD99958GW is a Battery Management LSI for 1 to 4-Cell Lithium-Ion battery, and available in a small 41-ball 0.4 mm pitch 2.6 mm x 3.0 mm Wafer-level CSP package which is designed to meet high degree demands for space-constraint equipment such as Low Profile Notebook PC, Tablets and other application ·Dual-source Battery Charger\n·High Efficiency Step-up/down Switching Charger for 1 to 4-Cell Li-Ion/Li-poly Battery\n·Two Separate Input Sources for USB-VBUS and DC Adapter.\n·Two Port BCS1.2 Detectors.\n·JEITA Compliant Charging Profile\n·Programmable Parameters for Preconditioning, Pre-charge Cur;

Silicon monolithic integrated circuits

Function (1) Input voltage: 15[V]（MAX） (2) Output current: 0.6[A]（MAX） (3) Low current consumption At the standby: 1[μA] or less（Standard） (4) Built-in soft start function (5) Built-in on/off function (6) Built-in output voltage change ability function (7) Over current protection・Heati

Silicon monolithic integrated circuits

Function (1) The output voltage can be set by external resistance. (2) Internal Power MOS transistor with Backgate Control function (3) Inrush current reduction (4) Integrated Soft start (5) Built-in Protection function NMOS overcurrent limit, overvoltage mute, thermal shutdown, output g

2 Cell / 3 Cell Narrow VDC Charger with SMBus Interface

文件：3.62563 Mbytes Page：37 Pages

封装/外壳：41-UFBGA，CSPBGA 功能：电池监控器 包装：卷带（TR）带 描述：IC BAT MON LI-ION 1-4C UCSP55M3C 集成电路（IC） 电池管理

封装/外壳：40-VFQFN 裸露焊盘 功能：电池监控器 包装：卷带（TR）带 描述：IC BATT LI-ION 1-4C UQFN040V5050 集成电路（IC） 电池管理

1 to 4-Cell Li-Ion Battery Manager For Application Processors

文件：8.47952 Mbytes Page：130 Pages

Silicon monolithic integrated circuits

文件：132.01 Kbytes Page：5 Pages

Silicon monolithic integrated circuits

文件：132.01 Kbytes Page：5 Pages

Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)

Silicon N-Channel MOSFET Triode
For high-frequency stages up to 300 MHz preferably in FM applications

High Speed Switching Diodes

High Speed Switching Diodes

Integrated Circuit Adjustable Precision Shunt Regulator

Description: The NTE999 is a three–terminal adjustable shunt regulator with guaranteed thermal stability over a temperature range of –0° to +70°C. The output voltage may be set to any value between Vref (approximately 2.5V) and 36V with two external resistors. This device has a typical dynamic ou

Integrared Circuit Programmable Precision Reference

Description: The NTE999M integrated circuit is a three–terminal programmable shunt regulator. This monolithic IC voltage reference operates as a low temperature coefficient zener which is programmable from Vref to 36 volts with two external resistors. This device exhibits a wide operating current

Integrared Circuit Programmable Precision Reference

Description: The NTE999SM integrated circuit is a three–terminal programmable shunt regulator. This monolithic IC voltage reference operates as a low temperature coefficient zener which is programmable from Vref to 36 volts with two external resistors. This device exhibits a wide operating curren