FET内置型 (5V耐压) 系统开关稳压器IC

数码相机所必需的从电池高效率创建复数电压的系统开关稳压器IC。内置功率FET和相位补偿元件,最适合受空间限制的小型数码相机。 ·7ch DC/DC converter, 2ch LDO embedded·CH1 Boost － Startup ch,Motor\n·CH2 LDO FET embedded Analog\n·CH3 Buck FET embedded Core\n·CH4 Buck-Boost FET embedded Digital\n·CH5 Boost/Buck － CMOS, Memory\n·CH6 Boost － LED\n·CH7 Boost FET embedded CCD\n·CH8 Reverse － CCD\n·CH9 LDO FET embedded Analog\n\n·Lo;

Switching Regulator ICs

文件：2.59432 Mbytes Page：30 Pages

Switching Regulator ICs

文件：2.59432 Mbytes Page：30 Pages

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE PHOTOCOUPLER

DESCRIPTION The PS9634 and PS9634L are optical linkage devices mounting a GaAs infrared ray LED on the light emitting side (input side) and a photo diode and a signal processing circuit on the light receiving side (output side) on one chip. They can directly drive a power transistor of 15 to 20

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 μA (Max.) @ VDS = -250V ■ Low RDS(ON) : 0.876 Ω (Typ.)

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS= -250V ■ Low RDS(ON) : 0.876 Ω(Typ.)

Advanced Power MOSFET

文件：251.52 Kbytes Page：7 Pages