isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 45V(Min.) • Complement to Type BD706 APPLICATIONS • Designed for use in power linear and switching applications.

silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package

DESCRIPTION The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO- 220 plastic package intendedfor useInpower linear and switching applications. The complementary PNP types are the BD706, BD708, BD710 and BD712 respectively.

NPN POWER TRANSISTORS

POWER LINEAR AND SWITCHING APPLICATIONS

Trans GP BJT NPN 60V 12A 3-Pin(3+Tab) TO-220

Nano Energy™-适用于低功耗应用的超低功耗降压转换器

BD70522GUL是一个降压转换器，具有180nA静态电流，支持高达500mA的输出电流。ULP（超低功率）模式的恒定开启时间（COT）控制提供了卓越的瞬态响应，并通过在10μA负载范围内提供卓越的轻载效率延长了电池寿命。输出电压可以通过VSEL引脚从9个预设电压中选择。当输入电压接近输出电压时，集成电路进入100%接通模式，开关操作停止。\n\n\n\n日本碍子株式会社的芯片型陶瓷二次电池“EnerCera®”与ROHM电源IC的超低静态电流技术“Nano Energy™”相结合，助力实现免维护物联网设备，构建超高效蓄电单元。\n\nEnerCera® × Nano Energy™ • Nano Energy技术\n• 180nA（典型）静态电流\n• 输出电流为10μA时，效率高达90%\n• 高达500毫安的输出电流\n• 9个可选输出电压（1.2V、1.5V、1.8V、2.0V、2.5V、2.8V、3.0V、3.2V、3.3V）\n• Power good输出\n• 低输入电压的100%开启模式\n• VOUT上的放电功能;

Ultra Low Iq Buck Converter

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封装/外壳：9-UFBGA，CSPBGA 功能：降压 包装：剪切带（CT） 描述：IC REG BUCK ADJ 500MA VCSP50L1 集成电路（IC） 稳压器 - DC-DC 开关稳压器

包装：散装 描述：EVAL BOARD FOR BD70522 开发板，套件，编程器 评估板 - DC/DC 与 AC/DC（离线）SMPS

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

GaAlAs Semiconductor Laser

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Silicon MOS IC

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