NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● RoHS compliant* ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V, 3 A

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647

isc Silicon NPN Darlington Power Transistor

* Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) * High DC Current Gain : hFE= 750(Min) @IC= 3A * Low Saturation Voltage * Complement to Type BD648

Silicon NPN Darlington Power Transistor

Eplbase power darlington transistors (62.5W) BD 643, BD 645, BD647, and BD649 are monolithic NPN Silicon epibase power darlington transistors with diode and resistors in a TO 220 AB plastic package (TOP-66). The collectors of the two transistors are electrically connected to the metallic mounting

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

Silicon NPN Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD645/647/649/651 ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier, and analogue switching applications

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

PNP SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

NPN SILICON DARLINGTON TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS

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NPN SILICON POWER DARLINGTONS

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isc Silicon NPN Darlington Power Transistor

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封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN DARL 80V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRANS NPN DARL 80V 8A

Ultralow Drift, Dual BiFET Op Amp

PRODUCT DESCRIPTION The AD647 is an ultralow drift, dual JFET amplifier that combines high performance and convenience in a single package. The AD647 uses the most advanced ion-implantation and laser wafer drift trimming technologies to achieve the highest performance currently available in a d

Pin Electronics Driver, Window Comparator, and Switch Matrix

Description The Edge647 is an integrated trinary driver, window comparator, and switch matrix pin electronics solution manufactured in a wide voltage CMOS process. It is designed for automatic test equipment and instrumentation where cost, functional density, and power are all at a premium. Feat

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DESCRIPTION The SA647 is a low-voltage high performance monolithic digital system with high-speed RSSI incorporating a mixer, oscillator with buffered output, two limiting intermediate frequency amplifiers, fast logarithmic received signal strength indicator (RSSI), voltage regulator, RSSI op amp

Low-voltage digital IF receiver

DESCRIPTION The SA647 is a low-voltage high performance monolithic digital system with high-speed RSSI incorporating a mixer, oscillator with buffered output, two limiting intermediate frequency amplifiers, fast logarithmic received signal strength indicator (RSSI), voltage regulator, RSSI op amp