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型号 功能描述 生产厂家 企业 LOGO 操作
BD249CG

NPN High?뭁ower Transistor

NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 • Pb−Free Package is Available*

ONSEMI

安森美半导体

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

POWER TRANSISTORS(25A,125W)

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

MOSPEC

统懋

Square Type

文件:31.34 Kbytes Page:1 Pages

PANASONIC

松下

BD249CG产品属性

  • 类型

    描述

  • 型号

    BD249CG

  • 功能描述

    两极晶体管 - BJT 25A 100V 125W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

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