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BD237晶体管资料

BD237(-6...-16)别名：BD237(-6...-16)三极管、BD237(-6...-16)晶体管、BD237(-6...-16)晶体三极管
BD237(-6...-16)生产厂家：德国AEG公司_德国椤茨标准电器公司_美国摩托罗拉半
BD237(-6...-16)制作材料：Si-NPN
BD237(-6...-16)性质：低频或音频放大（LF）_功率放大（L）
BD237(-6...-16)封装形式：直插封装
BD237(-6...-16)极限工作电压：100V
BD237(-6...-16)最大电流允许值：2A
BD237(-6...-16)最大工作频率：<1MHZ或未知
BD237(-6...-16)引脚数：3
BD237(-6...-16)最大耗散功率：25W
BD237(-6...-16)放大倍数：
BD237(-6...-16)图片代号：B-21
BD237(-6...-16)vtest：100
BD237(-6...-16)htest：999900
BD237(-6...-16)atest：2
BD237(-6...-16)wtest：25

BD237(-6...-16)代换 BD237(-6...-16)用什么型号代替：BD179,BD379,BD441,3DD61D,

BD237价格

参考价格：￥0.5997

型号：BD237 品牌：STMicroelectronics 备注：这里有BD237多少钱，2026年最近7天走势，今日出价，今日竞价，BD237批发/采购报价，BD237行情走势销售排行榜，BD237报价。

型号	功能描述	生产厂家企业	LOGO
BD237	丝印代码：BD237；TO-126 Plastic-Encapsulate Transistors FEATURES Complement to BD234/BD236/BD238 respectively	DGNJDZ 南晶电子	DGNJDZ
BD237-TU	丝印代码：BD237；TO-126 Plastic-Encapsulate Transistors FEATURES Complement to BD234/BD236/BD238 respectively	DGNJDZ 南晶电子	DGNJDZ
BD237	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
BD237	Silicon NPN transistor in a TO-126 Plastic Package. Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with BD238. Applications Medium power linear and switching applications.	FOSHAN 蓝箭电子	FOSHAN
BD237	Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃	TEL	TEL
BD237	Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications	ISC 无锡固电	ISC
BD237	isc Silicon NPN Power Transistor DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications	ISC 无锡固电	ISC
BD237	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD237	Silicon NPN Power Transistor DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
BD237	Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications	SAVANTIC	SAVANTIC
BD237	EPITAXIAL SILICON POWER TRANSISTORS EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications	CDIL	CDIL
BD237	NPN Plastic-Encapsulate Transistors Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy	MCC	MCC
BD237	Plastic Medium Power Silicon NPN Transistor Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc	MOTOROLA 摩托罗拉	MOTOROLA
BD237	NPN Epitaxial Planar Transistors NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
BD237	TO-126 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BD237	Medium Power Linear and Switching Applications Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively	FAIRCHILD 仙童半导体	FAIRCHILD
BD237	Plastic Medium Power Bipolar Transistors Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >	ONSEMI 安森美半导体	ONSEMI
BD237	80V, NPN TRANSISTORS DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage	UTC 友顺	UTC
BD237	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BD237	Low voltage NPN power transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BD237	Bipolar Transistor The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc.	UTC 友顺	UTC
BD237	NPN power transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Features ■ NPN transistors Applications ■ Audio,	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BD237	2.0 A，80 V，25W，NPN 双极功率晶体管 The 2 A, 80 V, 25W NPN Bipolar Power Transistor is designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. BD237 (NPN), BD234 (PNP) and BD238 (PNP) are complementary devices. • DC Current GainhFE = 40 (Min) @ IC = 0.15 Adc\n• Pb-Free Packages are Available;	ONSEMI 安森美半导体	ONSEMI
BD237	晶体管	JSCJ 长晶科技	JSCJ
BD237	COMPLEMENTARY SILICON POWER TRANSISTORS 文件：265.99 Kbytes Page：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BD237	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BD237	GERMANIOVE TRANZISTORY 文件：1.9422 Mbytes Page：14 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
BD237	Silicon NPN Power Transistors 文件：102.42 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
BD237	封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 80V 2A SOT32-3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
BD2378	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC BD2378 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package	UTC 友顺	UTC
BD2378G-K08-5060-R	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC BD2378 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package	UTC 友顺	UTC
BD2378L-K08-5060-R	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC BD2378 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package	UTC 友顺	UTC
BD237D	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for medium power linear and switching applications.	DCCOM 道全	DCCOM
BD237G	Plastic Medium Power Bipolar Transistors Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >	ONSEMI 安森美半导体	ONSEMI
BD237G	Plastic Medium Power Bipolar Transistors Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >	ONSEMI 安森美半导体	ONSEMI
BD237G-T6S-K	80V, NPN TRANSISTORS DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage	UTC 友顺	UTC
BD237L-T6S-K	80V, NPN TRANSISTORS DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage	UTC 友顺	UTC
BD237NPN	EPITAXIAL SILICON POWER TRANSISTORS EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications	CDIL	CDIL
BD237-S	NPN EPITAXIAL SILICON POWER TRANSISTOR NPN EPITAXIAL SILICON POWER TRANSISTOR Intended for use in Medium Power Linear Switching Applications TO126 Plastic Package	CDIL	CDIL
BD237STU	Medium Power Linear and Switching Applications Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively	FAIRCHILD 仙童半导体	FAIRCHILD
BD237_15	80V, NPN TRANSISTORS 文件：122.7 Kbytes Page：3 Pages	UTC 友顺	UTC
BD2378_15	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE 文件：105.6 Kbytes Page：4 Pages	UTC 友顺	UTC
BD2378G-K08-5060-R	COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE 文件：105.6 Kbytes Page：4 Pages	UTC 友顺	UTC
BD237G	封装/外壳：TO-225AA，TO-126-3 包装：管件描述：TRANS NPN 80V 2A TO126 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
BC237	Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon	ONSEMI 安森美半导体	ONSEMI
BC237B	Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon	ONSEMI 安森美半导体	ONSEMI
BC237C	Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon	ONSEMI 安森美半导体	ONSEMI
BC237C	Amplifier Transistors Amplifier Transistors NPN Silicon	MOTOROLA 摩托罗拉	MOTOROLA

BD237产品属性

类型
描述
Package：
SOT-32
Grade：
Industrial
Transistor Polarity：
NPN
Collector-Emitter Voltage_max(V)：
80
Collector-Base Voltage_max(V)：
100
Collector Current_max(A)：
2
Collector Current_abs_max(A)：
2
Dc Current Gain_min：
25
Test Condition for hFE (IC)：
1
Test Condition for hFE (VCE)_spec(V)：
2
VCE(sat)_max(V)：
0.6
Test Condition for VCE(sat) - IC：
1
Test Condition for VCE(sat) - IB_spec(mA)：
100

BD237供应商更多...

更新时间：2026-5-13 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BD237G	onsemi(安森美)	24+	TO-225	1259	原厂订货渠道,支持BOM配单一站式服务	询价
中天科工半导体（深圳）有限公司	BD237	PHI	20+	TO-126	38900	原装优势主营型号-可开原型号增税票	询价
深圳市联世界科技有限公司	BD237	FSC	24+/25+	TO-126	78	原装正品现货库存价优	询价
深圳市福田区绿盛电子商行	BD237	FSC	2018+	SOT-23	26976	代理原装现货/特价热卖!	询价
深圳市振宏微科技有限公司	BD237	ST	23+	TO-220	5000	专做原装正品,假一罚百!	询价
深圳市恒凯威科技开发有限公司	BD237	ST/意法半导体	21+	SOT-32-3	8860	只做原装,质量保证	询价
深圳市星宇佳科技有限公司	BD237	STM	21+	SOT-32-3 (TO-126-3)	1000		询价
瀚佳科技(深圳)有限公司	BD237G	ON	24+	TO-225	8900	全新原装现货,假一罚十	询价
深圳市佳鑫美电子科技有限公司	BD237	ST/意法半导体	25+	SOT-32-3	4650	绝对原装公司现货	询价
深圳诚思涵科技有限公司	BD237	STM	18+	TO-126	85600	保证进口原装可开17%增值税发票	询价

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找IC，尽在114IC

BD237晶体管资料

BD237价格

BD237产品属性

BD237供应商更多...

BD237芯片相关品牌

BD237规格书下载地址

BD237参数引脚图相关

BD237数据表相关新闻

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DdatasheetPDF页码索引