Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

NPN Epitaxial Planar Transistors

NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively. Features ■ NPN transistors Applications ■ Audio,

TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

80V, NPN TRANSISTORS

DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Power Dissipation: PCM =1.25W, Ta=25°C • Collector Current : IC=2A • Complement to BD234/236/238 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: BD233 : 45 V BD235: 60 V BD237: 100 V Operating and storage junction temperature range TJ : 150℃ Tstg: -65℃ to +150℃

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

Low voltage NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD238. Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio,

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-126 package • Complement to type BD234 /236 /238 APPLICATIONS • For medium power linear and switching applications

Silicon NPN transistor in a TO-126 Plastic Package.

Descriptions Silicon NPN transistor in a TO-126 Plastic Package. Features Complementary pair with BD238. Applications Medium power linear and switching applications.

Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE=40(Min)@lc=0.15A • Complement to Type BD234/236/238 APPLICATIONS • Designedfor use in 5-10 watt audio amplifiers and drivers utilizing complementaryor quasi complementarycircuits.

GERMANIOVE TRANZISTORY

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SEMICONDUCTORS

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COMPLEMENTARY SILICON POWER TRANSISTORS

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DESCRIPTION The UTC BD2378 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package

COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DESCRIPTION The UTC BD2378 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package

COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DESCRIPTION The UTC BD2378 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for medium power linear and switching applications.

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

80V, NPN TRANSISTORS

DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage

80V, NPN TRANSISTORS

DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

NPN EPITAXIAL SILICON POWER TRANSISTOR

NPN EPITAXIAL SILICON POWER TRANSISTOR Intended for use in Medium Power Linear Switching Applications TO126 Plastic Package

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively

TO-126 Plastic-Encapsulate Transistors

FEATURES Complement to BD234/BD236/BD238 respectively

80V, NPN TRANSISTORS

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COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE

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COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE

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封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN 80V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Leaf Wetness Sensor

Benefits and Features Sensor is shipped unpainted so customecran choose appropriate surface finish that best fits their application Imitates characteristics of a leaf Technical Description The 237 consists of a circuit board with interlacing goldplated fingers. Condensation on the sensor l

5 V Powered CMOS RS-232 Drivers/Receivers

GENERAL DESCRIPTION The ADM2xx family of line drivers/receivers is intended for all EIA-232-E and V.28 communications interfaces, especially in applications where ±12 V is not available. The ADM223, ADM230L, ADM235L, ADM236L and ADM241L feature a low power shutdown mode that reduces power dissipa

5 V Powered CMOS RS-232 Drivers/Receivers

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5 V-Powered CMOS RS-232 Drivers/Receivers

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5 V-Powered CMOS RS-232 Drivers/Receivers

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