位置：首页 > IC中文资料第11777页 > BD237D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD237D | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for medium power linear and switching applications. | DCCOM 道全 |   | |
BD237D | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | DCCOM 道全 | | |
Plastic Medium Power Silicon NPN Transistor Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc | MOTOROLA 摩托罗拉 | | ||
Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
Amplifier Transistors Amplifier Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Amplifier Transistors(NPN Silicon) Amplifier Transistors NPN Silicon | ONSEMI 安森美半导体 | |
BD237D产品属性
- 类型
描述
- 型号
BD237D
- 制造商
DCCOM
- 制造商全称
Dc Components
- 功能描述
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
BD237D规格书下载地址
BD237D参数引脚图相关
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DdatasheetPDF页码索引
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