Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

Plastic Medium Power Bipolar Transistors

Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • Epoxy Meets UL 94 V0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; >

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN 80V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80V, NPN TRANSISTORS

DESCRIPTION The UTC BD237 is an NPN transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, etc. FEATURES * Complement to UTC BD238 respectively * High collector-emitter breakdown voltage

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon

Amplifier Transistors

Amplifier Transistors NPN Silicon

Amplifier Transistors(NPN Silicon)

Amplifier Transistors NPN Silicon