Medium Power Linear and Switching Applications

Medium Power Linear and SwitchingApplications • Complement to BD 176/178/180 respectively

EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD176/178 /180 APPLICATIONS • For medium power linear and switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type BD176/178/180 APPLICATIONS ·For medium power linear and switching applications

EPITAXIAL SILICON POWER TRANSISTORS

EPITAXIAL SILICON POWER TRANSISTORS Intended for use in Medium Power Linear Switching Applications

TO-126 (SOT-32) Plastic Package

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS\nBD176, 178, 180 PNP PLASTIC POWER TRANSISTORS\n\nMedium Power Liner and Switching Applications

Trans GP BJT NPN 45V 3A 3-Pin(3+Tab) TO-126

EPITAXIAL SILICON POWER TRANSISTORS

Silicon NPN Power Transistors

文件：107.23 Kbytes Page：3 Pages

Single Bipolar Transistor

文件：191.92 Kbytes Page：2 Pages

EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 45V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Constant Current Backlight Driver for LCD Panels (Non-step-up Type)

文件：331.18 Kbytes Page：12 Pages

Constant Current LED Driver

文件：1.47719 Mbytes Page：21 Pages

Constant Current LED Driver with 64 Dimming Steps for up to 4 LEDs

文件：379.35 Kbytes Page：19 Pages

Constant Current LED Driver with 64 Dimming Steps for up to 4 LEDs

文件：379.35 Kbytes Page：19 Pages

Constant Current LED Driver with 64 Dimming Steps for up to 4 LEDs

文件：379.35 Kbytes Page：19 Pages

Constant Current LED Driver

文件：1.47719 Mbytes Page：21 Pages

Constant Current LED Driver

文件：1.47719 Mbytes Page：21 Pages

Constant Current LED Driver with 64 Dimming Steps for up to 4 LEDs

文件：379.35 Kbytes Page：19 Pages

封装/外壳：8-PowerUDFN 包装：管件 描述：IC LED DRV LIN MULT-STEP 8HSON 集成电路（IC） LED 驱动器

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: