PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION.

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Complementary to BCW66, BCW68 is subdivided into three groups F, G and H according to its DC current gain.

PNP General Purpose Transistors

Features ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage.

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for high current application The transistor is subdivided into three groups F, G and H according to its DC current gain.

PNP Plastic-Encapsulate Transistors

FEATURES • Complementary to BCW66.

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

SOT-23 Plastic-Encapsulate Transistors

FEATURES Complementary to BCW66, BCW68 is subdivided into three groups F, G and H according to its DC current gain.

High Collector Current

● PARTMARKING DETAILS – BCW68F – DF BCW68G – DG BCW68H – DH ● COMPLEMENTARY TYPES – BCW66

45 V, 800 mA PNP general-purpose transistor

General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

45 V, 800 mA PNP general-purpose transistor

1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick

PNP Silicon Epitaxial Planar Transistor

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EPITAXIAL PLANAR PNP TRANSISTOR

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小信号晶体管

双极型晶体管

PNP小信号三极管

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：DF；PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：ET；45 V, 800 mA PNP general-purpose transistor

1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick

丝印代码：ET；45 V, 800 mA PNP general-purpose transistor

General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

High Collector Current

● PARTMARKING DETAILS – BCW68F – DF BCW68G – DG BCW68H – DH ● COMPLEMENTARY TYPES – BCW66

丝印代码：DF；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

丝印代码：DF；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

丝印代码：7T；PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Small Signal Transistor 330mW

Features • Ideally Suited for Automatic Insertion • Low Current, Low Voltage • Epitaxial Planar Die Construction • Halogen Free. Green Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

丝印代码：DG；PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63.

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：DG；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

PNP General Purpose Amplifier

Features: •For general AF applications •High current gain •Low collector-emitter saturation voltage •Complementary types: BCW65,BCW66(NPN) Applications: •This device is designed for general purpose amplifier and switching applications

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

High Collector Current

● PARTMARKING DETAILS – BCW68F – DF BCW68G – DG BCW68H – DH ● COMPLEMENTARY TYPES – BCW66

丝印代码：DG；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS

丝印代码：EU；45 V, 800 mA PNP general-purpose transistor

General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

丝印代码：EU；45 V, 800 mA PNP general-purpose transistor

1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick

General Purpose Transistors

General Purpose Transistors PNP Silicon Pb-Free package is available We declare that the material of product compliance with RoHS requirements.

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

General Purpose Transistor

General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

General Purpose Transistors

PNP Silicon ● RoHS product for packing code suffix G, Halogen free product for packing code suffix H ● Weight : 0.008g

General Purpose Transistor

General Purpose Transistors PNP Silicon