BCW68G价格

参考价格:¥0.1875

型号:BCW68G 品牌:FAIRCHILD 备注:这里有BCW68G多少钱,2025年最近7天走势,今日出价,今日竞价,BCW68G批发/采购报价,BCW68G行情走势销售排行榜,BCW68G报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCW68G

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

Zetex

BCW68G

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

SIEMENS

西门子

BCW68G

PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63.

Fairchild

仙童半导体

BCW68G

PNP Small Signal Transistor 330mW

Features • Ideally Suited for Automatic Insertion • Low Current, Low Voltage • Epitaxial Planar Die Construction • Halogen Free. Green Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C

MCC

BCW68G

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

BCW68G

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Diotec

德欧泰克

BCW68G

Surface Mount General Purpose Si-Epi-Planar Transistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23(TO-236) • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Diotec

德欧泰克

BCW68G

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

Central

BCW68G

General Purpose Transistors

General Purpose Transistors PNP Silicon Pb-Free package is available We declare that the material of product compliance with RoHS requirements.

YEASHIN

亚昕科技

BCW68G

High Collector Current

● PARTMARKING DETAILS – BCW68F – DF BCW68G – DG BCW68H – DH ● COMPLEMENTARY TYPES – BCW66

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BCW68G

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

CDIL

BCW68G

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS

WINNERJOIN

永而佳

BCW68G

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

BILIN

银河微电

BCW68G

45 V, 800 mA PNP general-purpose transistor

General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits • High current • AEC-Q101 qualified Applications • General-purpose switching and amplification

NEXPERIA

安世

BCW68G

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

LUGUANG

鲁光电子

BCW68G

45 V, 800 mA PNP general-purpose transistor

1 General description PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complements: BCW66F/G/H 2 Features and benefits • High current • AEC-Q101 qualified 3 Applications • General-purpose switching and amplification 4 Quick

NEXPERIA

安世

BCW68G

PNP General Purpose Amplifier

Features: •For general AF applications •High current gain •Low collector-emitter saturation voltage •Complementary types: BCW65,BCW66(NPN) Applications: •This device is designed for general purpose amplifier and switching applications

MULTICOMP

易络盟

BCW68G

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

BCW68G

SURFACE MOUNT PNP SILICON TRANSISTOR

文件:328.78 Kbytes Page:2 Pages

Central

BCW68G

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 45V 0.8A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BCW68G

PNP General-Purpose Amplifier

文件:133.94 Kbytes Page:7 Pages

Fairchild

仙童半导体

BCW68G

PNP Transistors

文件:1.44421 Mbytes Page:3 Pages

KEXIN

科信电子

BCW68G

PNP Transistors

文件:1.29839 Mbytes Page:3 Pages

KEXIN

科信电子

BCW68G

PNP Small Signal Transistor 330mW

文件:227.62 Kbytes Page:3 Pages

MCC

BCW68G

PNP Silicon AF Transistors

文件:79.34 Kbytes Page:8 Pages

Infineon

英飞凌

BCW68G

PNP Small Signal Transistor 330mW

文件:192.49 Kbytes Page:3 Pages

MCC

BCW68G

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

文件:300.16 Kbytes Page:2 Pages

RECTRON

丽正国际

BCW68G

45 V, 800 mA PNP general-purpose transistor

NEXPERIA

安世

BCW68G

BCW68G: PNP General Purpose Amplifier

ONSEMI

安森美半导体

BCW68G

AF 通用晶体管

Infineon

英飞凌

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

General Purpose Transistor

General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistors PNP Silicon

Motorola

摩托罗拉

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon

LRC

乐山无线电

General Purpose Transistors

PNP Silicon ● RoHS product for packing code suffix G, Halogen free product for packing code suffix H ● Weight : 0.008g

WILLAS

威伦电子

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR PARTMARKING DETAILS – BCW68F – DF BCW68FR – 7T BCW68G – DG BCW68GR – 5T BCW68H – DH BCW68HR – 7N COMPLEMENTARY TYPES – BCW66

Zetex

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP Small Signal Transistor 330mW

文件:192.49 Kbytes Page:3 Pages

MCC

PNP Small Signal Transistor 330mW

文件:227.62 Kbytes Page:3 Pages

MCC

PNP General-Purpose Amplifier

文件:133.94 Kbytes Page:7 Pages

Fairchild

仙童半导体

PNP EPITAXIAL SILICON TRANSISTOR

文件:64.29 Kbytes Page:1 Pages

WINNERJOIN

永而佳

General Purpose Transistor

文件:92.71 Kbytes Page:5 Pages

ONSEMI

安森美半导体

General Purpose Transistor

文件:92.71 Kbytes Page:5 Pages

ONSEMI

安森美半导体

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 45V 0.8A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

General Purpose Transistor

文件:92.71 Kbytes Page:5 Pages

ONSEMI

安森美半导体

General Purpose Transistor

文件:92.71 Kbytes Page:5 Pages

ONSEMI

安森美半导体

BCW68G产品属性

  • 类型

    描述

  • 型号

    BCW68G

  • 功能描述

    两极晶体管 - BJT SOT-23 PNP GP AMP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-11-24 20:07:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROCOMMERCIALCOMPONENTS
24+
NA
24000
原装现货,专业配单专家
ON/安森美
22+
SOT-23
100000
代理渠道/只做原装/可含税
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
NEXPERIA/安世
24+
原厂原封可拆样
65258
百分百原装现货,实单必成
INFINEON/英飞凌
25+
SOT23
33352
INFINEON/英飞凌全新特价BCW68G即刻询购立享优惠#长期有货
ON/安森美
16+
SOT23
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
2450+
SOT23
8850
只做原装正品假一赔十为客户做到零风险!!
ON(安森美)
23+
SOT-23(SOT-23-3)
13120
公司只做原装正品,假一赔十
ON
24+
SOT-23 (TO-236)
25000
ON全系列可订货
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

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