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BCW67晶体管资料

BCW67(DA,DB,DC)别名：BCW67(DA,DB,DC)三极管、BCW67(DA,DB,DC)晶体管、BCW67(DA,DB,DC)晶体三极管
BCW67(DA,DB,DC)生产厂家：德国西门子AG公司
BCW67(DA,DB,DC)制作材料：Si-PNP
BCW67(DA,DB,DC)性质：微型（Min）_低频或音频放大（LF）_开关管（S）
BCW67(DA,DB,DC)封装形式：贴片封装
BCW67(DA,DB,DC)极限工作电压：45V
BCW67(DA,DB,DC)最大电流允许值：1A
BCW67(DA,DB,DC)最大工作频率：<1MHZ或未知
BCW67(DA,DB,DC)引脚数：3
BCW67(DA,DB,DC)最大耗散功率：0.35W
BCW67(DA,DB,DC)放大倍数：
BCW67(DA,DB,DC)图片代号：H-15
BCW67(DA,DB,DC)vtest：45
BCW67(DA,DB,DC)htest：999900
BCW67(DA,DB,DC)atest：1
BCW67(DA,DB,DC)wtest：0.35

BCW67(DA,DB,DC)代换 BCW67(DA,DB,DC)用什么型号代替：BCX17,3CK10E,

BCW67价格

参考价格：￥0.1629

型号：BCW67BE6327HTSA1 品牌：Infineon 备注：这里有BCW67多少钱，2026年最近7天走势，今日出价，今日竞价，BCW67批发/采购报价，BCW67行情走势销售排行榜，BCW67报价。

型号	功能描述	生产厂家企业	LOGO
BCW67	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67	GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor	CDIL	CDIL
BCW67	SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW	CENTRAL	CENTRAL
BCW67	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	DIOTEC 德欧泰克	DIOTEC
BCW67	PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	BILIN 银河微电	BILIN
BCW67	PNP General Purpose Transistors Features ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage.	KEXIN 科信电子	KEXIN
BCW67	PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	LUGUANG 鲁光电子	LUGUANG
BCW67	PNP Silicon AF Transistors PNP Silicon AF Transistors• For general AF applications\n• High current gain\n• Low collector-emitter saturation voltage\n• Complementary types: BCW66 (NPN)\n• Pb-free (RoHS compliant) package\n• Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67A	丝印代码：DA；PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	LUGUANG 鲁光电子	LUGUANG
BCW67A	PNP Silicon AF Transistors (For general AF applications High current gain) PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)	SIEMENS 西门子	SIEMENS
BCW67A	丝印代码：DA；PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	BILIN 银河微电	BILIN
BCW67A	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	DIOTEC 德欧泰克	DIOTEC
BCW67A	SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW	CENTRAL	CENTRAL
BCW67A	GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor	CDIL	CDIL
BCW67A	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67A	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67A-DA	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67AR	丝印代码：4W；SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67AR-4W	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67B	Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	DIOTEC 德欧泰克	DIOTEC
BCW67B	SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW	CENTRAL	CENTRAL
BCW67B	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67B	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67B	GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor	CDIL	CDIL
BCW67B	丝印代码：DB；PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	BILIN 银河微电	BILIN
BCW67B	PNP Silicon AF Transistors (For general AF applications High current gain) PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)	SIEMENS 西门子	SIEMENS
BCW67B	丝印代码：DB；PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	LUGUANG 鲁光电子	LUGUANG
BCW67B	AF 通用晶体管 PNP硅AF晶体管 • 适用于一般 AF 应用\n• 低集电极-发射极饱和电压\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求;	INFINEON 英飞凌	INFINEON
BCW67BCW68	PNP Silicon AF Transistors (For general AF applications High current gain) PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)	SIEMENS 西门子	SIEMENS
BCW67B-DB	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67BR-5W	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67C	丝印代码：DC；Surface mount Si-Epitaxial PlanarTransistors Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled	DIOTEC 德欧泰克	DIOTEC
BCW67C	SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW	CENTRAL	CENTRAL
BCW67C	GENERAL PURPOSE TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor	CDIL	CDIL
BCW67C	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67C	PNP Silicon AF Transistors PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCW67C	丝印代码：DC；PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	LUGUANG 鲁光电子	LUGUANG
BCW67C	PNP Silicon AF Transistors (For general AF applications High current gain) PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)	SIEMENS 西门子	SIEMENS
BCW67C	丝印代码：DC；PNP General Purpose Amplifier FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.	BILIN 银河微电	BILIN
BCW67C-DC	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67CR-6W	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)	DIODES 美台半导体	DIODES
BCW67_07	PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages	INFINEON 英飞凌	INFINEON
BCW67_15	SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages	CENTRAL	CENTRAL
BCW67A	SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages	CENTRAL	CENTRAL
BCW67A	PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages	INFINEON 英飞凌	INFINEON
BCW67A-DA	SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS	DIODES 美台半导体	DIODES
BCW67B	PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages	INFINEON 英飞凌	INFINEON
BCW67B	SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages	CENTRAL	CENTRAL
BCW67BE6327HTSA1	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 32V 0.8A SOT23 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	INFINEON 英飞凌	INFINEON
BCW67C	SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages	CENTRAL	CENTRAL
BCW67C	PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages	INFINEON 英飞凌	INFINEON
BCW67CE6327HTSA1	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 32V 0.8A SOT23 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	INFINEON 英飞凌	INFINEON

BCW67产品属性

类型
描述
hFE：
160 to 400
IBMmax：
200 mA
ICBOmax：
20 nA
ICmax：
800 mA
IC：
800 mA
ICMmax：
1000 mA
Ptotmax：
330 mW
VCBOmax：
45 V
VCE(sat)max：
0.7 V
VCEOmax：
32 V
VCE：
1 V
VEBOmax：
5 V
Mounting：
SMT
Package：
P-SOT23-3-3
Polarity：
PNP (Single)

BCW67供应商更多...

更新时间：2026-7-29 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	BCW67C	INFINEON	2016+	SOT-23	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市纳艾斯科技有限公司	BCW67CE6327	INFINEO	24+	SOT23-3	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
中天科工半导体（深圳）有限公司	BCW67C	INFINEON/英飞凌	25+	SOT23	33350	INFINEON/英飞凌全新特价BCW67C即刻询购立享优惠#长期有货	询价
深圳市达恩科技有限公司	BCW67CE6327	Infineon	24+	NA	3000	进口原装正品优势供应	询价
深圳市富芯乐电子科技有限公司	BCW67CE6327	INF	24+	NA	6000	只做原装正品现货欢迎来电查询15919825718	询价
洪芯国际半导体（深圳）有限公司	BCW67CTA/DC	Zetex	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
和稷电子技术开发（深圳）有限公司	BCW67BE6327	INFINEON	25+		3000		询价
深圳市恒凯威科技开发有限公司	BCW67CE6327	Infineon/英飞凌	21+	SOT23	6820	只做原装,质量保证	询价
深圳市恒达亿科技有限公司	BCW67C	Infineon	25+	SOT23	3200	全新原装、诚信经营、公司现货销售	询价
深圳市科恒伟业电子有限公司	BCW67AE-6327	INFINEON/英飞凌	2450+	SOT23-3	6540	只做原装正品现货或订货!终端客户免费申请样品!	询价

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找IC，尽在114IC

BCW67晶体管资料

BCW67价格

BCW67产品属性

BCW67供应商更多...

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DdatasheetPDF页码索引