BCW67晶体管资料

  • BCW67(DA,DB,DC)别名:BCW67(DA,DB,DC)三极管、BCW67(DA,DB,DC)晶体管、BCW67(DA,DB,DC)晶体三极管

  • BCW67(DA,DB,DC)生产厂家:德国西门子AG公司

  • BCW67(DA,DB,DC)制作材料:Si-PNP

  • BCW67(DA,DB,DC)性质:微型 (Min)_低频或音频放大 (LF)_开关管 (S)

  • BCW67(DA,DB,DC)封装形式:贴片封装

  • BCW67(DA,DB,DC)极限工作电压:45V

  • BCW67(DA,DB,DC)最大电流允许值:1A

  • BCW67(DA,DB,DC)最大工作频率:<1MHZ或未知

  • BCW67(DA,DB,DC)引脚数:3

  • BCW67(DA,DB,DC)最大耗散功率:0.35W

  • BCW67(DA,DB,DC)放大倍数

  • BCW67(DA,DB,DC)图片代号:H-15

  • BCW67(DA,DB,DC)vtest:45

  • BCW67(DA,DB,DC)htest:999900

  • BCW67(DA,DB,DC)atest:1

  • BCW67(DA,DB,DC)wtest:0.35

  • BCW67(DA,DB,DC)代换 BCW67(DA,DB,DC)用什么型号代替:BCX17,3CK10E,

BCW67价格

参考价格:¥0.1629

型号:BCW67BE6327HTSA1 品牌:Infineon 备注:这里有BCW67多少钱,2025年最近7天走势,今日出价,今日竞价,BCW67批发/采购报价,BCW67行情走势销售排行榜,BCW67报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BCW67

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

BCW67

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Diotec

德欧泰克

BCW67

PNP General Purpose Transistors

Features ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage.

KEXIN

科信电子

BCW67

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

Central

BCW67

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

BILIN

银河微电

BCW67

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

CDIL

BCW67

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

BCW67

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

LUGUANG

鲁光电子

BCW67

PNP Silicon AF Transistors

Infineon

英飞凌

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

BILIN

银河微电

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

CDIL

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

LUGUANG

鲁光电子

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

SIEMENS

西门子

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

Central

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Diotec

德欧泰克

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

SIEMENS

西门子

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Diotec

德欧泰克

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

CDIL

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

BILIN

银河微电

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

LUGUANG

鲁光电子

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

Central

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

SIEMENS

西门子

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

SIEMENS

西门子

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Diotec

德欧泰克

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

Central

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

CDIL

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Infineon

英飞凌

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

BILIN

银河微电

PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

LUGUANG

鲁光电子

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

PNP Silicon AF Transistors

文件:79.34 Kbytes Page:8 Pages

Infineon

英飞凌

SURFACE MOUNT PNP SILICON TRANSISTOR

文件:328.78 Kbytes Page:2 Pages

Central

SURFACE MOUNT PNP SILICON TRANSISTOR

文件:328.78 Kbytes Page:2 Pages

Central

PNP Silicon AF Transistors

文件:79.34 Kbytes Page:8 Pages

Infineon

英飞凌

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

DIODES

美台半导体

SURFACE MOUNT PNP SILICON TRANSISTOR

文件:328.78 Kbytes Page:2 Pages

Central

AF 通用晶体管

Infineon

英飞凌

PNP Silicon AF Transistors

文件:79.34 Kbytes Page:8 Pages

Infineon

英飞凌

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 32V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Infineon

英飞凌

SURFACE MOUNT PNP SILICON TRANSISTOR

文件:328.78 Kbytes Page:2 Pages

Central

PNP Silicon AF Transistors

文件:79.34 Kbytes Page:8 Pages

Infineon

英飞凌

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 32V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Infineon

英飞凌

BCW67产品属性

  • 类型

    描述

  • 型号

    BCW67

  • 制造商

    DIOTEC

  • 制造商全称

    Diotec Semiconductor

  • 功能描述

    Surface mount Si-Epitaxial PlanarTransistors

更新时间:2025-11-20 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
SOT-23
3022
原厂订货渠道,支持BOM配单一站式服务
INFINEON/英飞凌
24+
NA/
4120
原装现货,当天可交货,原型号开票
INFINEON
2016+
SOT-23
3000
只做原装,假一罚十,公司可开17%增值税发票!
INFINEO
24+
SOT23-3
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Infineon/英飞凌
23+
SOT23
12700
买原装认准中赛美
INFINEON/英飞凌
25+
SOT-23
54558
百分百原装现货 实单必成 欢迎询价
INFINEON/英飞凌
24+
SOT-23
880000
明嘉莱只做原装正品现货
INFINEON
24+
SOT-23
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
INFINEON/英飞凌
25+
SOT23
33350
INFINEON/英飞凌全新特价BCW67C即刻询购立享优惠#长期有货
Infineon/英飞凌
21+
SOT23
6820
只做原装,质量保证

BCW67数据表相关新闻