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BCW67晶体管资料
BCW67(DA,DB,DC)别名：BCW67(DA,DB,DC)三极管、BCW67(DA,DB,DC)晶体管、BCW67(DA,DB,DC)晶体三极管
BCW67(DA,DB,DC)生产厂家：德国西门子AG公司
BCW67(DA,DB,DC)制作材料：Si-PNP
BCW67(DA,DB,DC)性质：微型 （Min）_低频或音频放大 （LF）_开关管 （S）
BCW67(DA,DB,DC)封装形式：贴片封装
BCW67(DA,DB,DC)极限工作电压：45V
BCW67(DA,DB,DC)最大电流允许值：1A
BCW67(DA,DB,DC)最大工作频率：<1MHZ或未知
BCW67(DA,DB,DC)引脚数：3
BCW67(DA,DB,DC)最大耗散功率：0.35W
BCW67(DA,DB,DC)放大倍数：
BCW67(DA,DB,DC)图片代号：H-15
BCW67(DA,DB,DC)vtest：45
BCW67(DA,DB,DC)htest：999900
- BCW67(DA,DB,DC)atest：1
BCW67(DA,DB,DC)wtest：.35
BCW67(DA,DB,DC)代换 BCW67(DA,DB,DC)用什么型号代替：BCX17,3CK10E,
BCW67价格
参考价格：￥0.1629
型号：BCW67BE6327HTSA1 品牌：Infineon 备注：这里有BCW67多少钱，2024年最近7天走势，今日出价，今日竞价，BCW67批发/采购报价，BCW67行情走势销售排行榜，BCW67报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BCW67 | PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
BCW67 | Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 |  | |
BCW67 | PNP General Purpose Transistors Features ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BCW67 | SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBCW67andBCW68SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:SEEMARKINGCODETABLEONFOLLOW | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
BCW67 | PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifier andswitchingapplications. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 |  | |
BCW67 | GENERAL PURPOSE TRANSISTOR GENERALPURPOSETRANSISTOR SOT-23FormedSMDPackage P–N–Ptransistor | CDIL CDIL |  | |
BCW67 | PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCW67 | PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplications. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 |  | |
PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifier andswitchingapplications. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
GENERAL PURPOSE TRANSISTOR GENERALPURPOSETRANSISTOR SOT-23FormedSMDPackage P–N–Ptransistor | CDIL CDIL | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplications. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
PNP Silicon AF Transistors (For general AF applications High current gain) PNPSiliconAFTransistors ●ForgeneralAFapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCW65,BCW66(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 |  | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBCW67andBCW68SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:SEEMARKINGCODETABLEONFOLLOW | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 |  | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP Silicon AF Transistors (For general AF applications High current gain) PNPSiliconAFTransistors ●ForgeneralAFapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCW65,BCW66(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBCW67andBCW68SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:SEEMARKINGCODETABLEONFOLLOW | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
GENERAL PURPOSE TRANSISTOR GENERALPURPOSETRANSISTOR SOT-23FormedSMDPackage P–N–Ptransistor | CDIL CDIL | | | |
PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifier andswitchingapplications. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplications. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
PNP Silicon AF Transistors (For general AF applications High current gain) PNPSiliconAFTransistors ●ForgeneralAFapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCW65,BCW66(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP Silicon AF Transistors (For general AF applications High current gain) PNPSiliconAFTransistors ●ForgeneralAFapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCW65,BCW66(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Surface mount Si-Epitaxial PlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORBCW67andBCW68SeriestypesarePNPSiliconTransistorsmanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforgeneralpurposeswitchingandamplifierapplications. MARKINGCODE:SEEMARKINGCODETABLEONFOLLOW | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
GENERAL PURPOSE TRANSISTOR GENERALPURPOSETRANSISTOR SOT-23FormedSMDPackage P–N–Ptransistor | CDIL CDIL | | | |
PNP Silicon AF Transistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BCW66...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifier andswitchingapplications. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | | | |
PNP General Purpose Amplifier FEATURES ●ForgeneralAFapplications. ●Highcurrentgain. ●Lowcollector-emittersaturationvoltage. ●Complementarytypes:BCW65,BCW66(NPN). APPLICATIONS ●Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplications. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Features •BVCEO>-45V •IC=-800mAhighContinuousCollectorCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 32V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
SURFACE MOUNT PNP SILICON TRANSISTOR 文件：328.78 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP Silicon AF Transistors 文件：79.34 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 32V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCW67产品属性
- 类型
描述
- 型号
BCW67
- 制造商
DIOTEC
- 制造商全称
Diotec Semiconductor
- 功能描述
Surface mount Si-Epitaxial PlanarTransistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
NA/ |
4120 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
23+ |
SOT-23 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
INFINEON/英飞凌 |
24+ |
SOT-23 |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
23+ |
SOT-23 |
20000 |
原厂原装正品现货 |
|||
INFINEON |
21+ |
SOT23-3 |
35400 |
一级代理/放心采购 |
|||
Infineon(英飞凌) |
23+ |
SOT23 |
6000 |
诚信服务，绝对原装原盘 |
|||
Infineon/英飞凌 |
23+ |
SOT23 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
1822+ |
SOT-23 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon/英飞凌 |
21+ |
SOT23 |
6820 |
只做原装,质量保证 |
|||
Infineon |
23+ |
SOT23 |
3200 |
全新原装、诚信经营、公司现货销售 |
BCW67芯片相关品牌
BCW67规格书下载地址
BCW67参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BCW84(B,C)
- BCW83(A,B,C)
- BCW82(A,B)
- BCW80(-10...-25)
- BCW80
- BCW79(-10...-25)
- BCW79
- BCW78(-16...-40)
- BCW78
- BCW77(-16...-40)
- BCW76(-10...-25)
- BCW75(-10...-25)
- BCW74(-16...-40)
- BCW73(-16...-40)
- BCW72(K2)
- BCW72
- BCW71R
- BCW71_1
- BCW71(K1)
- BCW71
- BCW70R
- BCW70(H2)
- BCW70
- BCW69R
- BCW69(H1)
- BCW69
- BCW68HR
- BCW68H
- BCW68GR
- BCW68GL
- BCW68G
- BCW68FR
- BCW68F
- BCW68(DF,DG,DH)
- BCW68
- BCW67C
- BCW67B
- BCW67AR
- BCW67A
- BCW67(DA,DB,DC)
- BCW66KH
- BCW66KG
- BCW66KF
- BCW66K
- BCW66HR
- BCW66H
- BCW66GR
- BCW66G
- BCW66FR
- BCW66F
- BCW66(EF,EG,EH)
- BCW66
- BCW65C
- BCW65B
- BCW65AR
- BCW65A
- BCW65(EA,EB,EC)
- BCW65
- BCW64(A,B,C)
- BCW63(A,B,C)
- BCW62(A,B)
- BCW61FN
- BCW61FF
- BCW61D
- BCW61C
- BCW61(BA,BB,BC,BD)
- BCW60(AA,AB,AC,AD)
- BCW59(A,B)
- BCW58(A,B)
- BCW57(A,B)
- BCW56(A)
- BCW55
- BCW54
- BCW52
- BCW51(A,B)
- BCW50
- BCW49(B,C)
- BCW48(A,B,C)
- BCW47(A,B)
- BCW46(A,B)
BCW67数据表相关新闻
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原装现货
2019-9-11
DdatasheetPDF页码索引
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