PNP Silicon AF Transistors (For general AF applications High current gain)

PNP Silicon AF Transistors ● For general AF applications ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BCW 65, BCW 66 (NPN)

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：DC；Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

GENERAL PURPOSE TRANSISTOR

GENERAL PURPOSE TRANSISTOR SOT-23 Formed SMD Package P–N–P transistor

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：DC；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

丝印代码：DC；PNP General Purpose Amplifier

FEATURES ● For general AF applications. ● High current gain. ● Low collector-emitter saturation voltage. ● Complementary types:BCW65,BCW66(NPN). APPLICATIONS ● This device is designed for general purpose amplifier and switching applications.

AF 通用晶体管

PNP硅AF晶体管 • 适用于一般 AF 应用\n• 低集电极-发射极饱和电压\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q102 要求;

SURFACE MOUNT PNP SILICON TRANSISTOR

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PNP Silicon AF Transistors

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SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 32V 0.8A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个